Effect Of GaN Nucleation Layer Temperature On Structural And Morphological Properties Of Ud-GaN Template Grown On Pss
In this study, the role of nucleation layer temperature on the ud-GaN crystal quality grown on cone-patterned sapphire substrate (PSS) by metalorganic chemical vapor deposition (MOCVD) was explored. To do this, the crystal qualities of bulk GaN were characterized by rocking curves of (002) and (102)...
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| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48841/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20102.pdf http://eprints.usm.my/48841/ |
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