Effect of Different UV Light Intensity on Porous Silicon Fabricated by Using Alternating Current photo-assisted Electrochemical Etching (ACPEC) Technique
Alternating current photo-assisted electrochemical etching (ACPEC) process was used to produce the formation of porous silicon with different ultra-violet(UV) light intensity. The study aims to investigate the effect of different UV light illumination on the properties of porous silicon. The surface...
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| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2017
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48823/1/ZH17_OP02_1.pdf%20done.pdf http://eprints.usm.my/48823/ https://iopscience.iop.org/article/10.1088/1742-6596/1083/1/012034/pdf |
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| Summary: | Alternating current photo-assisted electrochemical etching (ACPEC) process was used to produce the formation of porous silicon with different ultra-violet(UV) light intensity. The study aims to investigate the effect of different UV light illumination on the properties of porous silicon. The surface of n-type silicon (111) was selectively etched in the HF and ethanol solution with ratio (5:20) for 30 minutes under different UV lamp intensity; 40%, 50% and 60%. The samples were characterized by using field emission scanning electron microscope (FESEM), atomic force microscopy (AFM) and high resolution X-ray diffraction (HR-XRD). |
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