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Influences of Elevated Thermal Decomposition of Ammonia Gas on Indium Nitride Grown by Sol-Gel Spin Coating Method

Indium nitride (lnN) with unique properties such as small energy band gap of 0.7 eV, high electron affinity and carrier density, is a potential semiconductor material in the applications of optical and electronic devices [I , 2] . Despite, the suitable growth conditions of InN are very stringent due...

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Main Authors: Lee, Zhi Yin, Ng, Sha Shiong, Yami, Fong Kwong
Format: Conference or Workshop Item
Language:English
Published: 2016
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QC1-999 Physics
Online Access:http://eprints.usm.my/48787/1/NG8.pdf%20done.pdf
http://eprints.usm.my/48787/
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spelling my.usm.eprints.48787 http://eprints.usm.my/48787/ Influences of Elevated Thermal Decomposition of Ammonia Gas on Indium Nitride Grown by Sol-Gel Spin Coating Method Lee, Zhi Yin Ng, Sha Shiong Yami, Fong Kwong QC1-999 Physics Indium nitride (lnN) with unique properties such as small energy band gap of 0.7 eV, high electron affinity and carrier density, is a potential semiconductor material in the applications of optical and electronic devices [I , 2] . Despite, the suitable growth conditions of InN are very stringent due to its low dissociation temperature and volatility of atomic nitrogen [3] . In this study, InN thin films grown on aluminium nitride (AIN) on p-type silicon(! II) [AIN/p-type Si(lll)] substrates are prepared via sol-gel spin coating method followed by nitridation process. Sol-gel spin coating is a low cost, fast processing and dilute solution based deposition method to produce thin and uniform film on substrate. The spin-coater is programmed to operate in a two-step spin profile; the first spinning speed is slower than the second. In subsequent, two three-zone tube furnaces connected in parallel manner are used for nitriding process; the passage of ammonia gas (NH3) into the first furnace is decomposed to produce reactive nitrogen radicals and brought into the second furnace for crystallization oflnN at 600°C. The effects of thermal decomposition of NH3 gas on structural properties and surface morphologies of the depos ited films are explored. X-ray diffraction results reveal that the crystalline quality of InN degrades markedly with increasing thermal decomposition ofNH3 gas from 700 to 850 °C; in which, the association of indium oxide in the deposited film is detected. In the meantime, thermal etching effect and formation of indium droplet on the film can be observed at 850 oc; the findings are aligned with the cross-sectional analysis obtained by energy dispersive spectroscopy attached field-emission scanning electron microscopy, where the film thickness is found to be reduced tremendously. This phenomenon is mainly due to the increase of hydrogen partial pressure at elevated thermal decomposition of N H3 gas. On the other hand, the film surface with densely packed InN grains and film thickness of approximately to 620 nm is obtained at 700 oc. The results deduce that this temperature is in favor for the growth of InN thin films . 2016-08-11 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48787/1/NG8.pdf%20done.pdf Lee, Zhi Yin and Ng, Sha Shiong and Yami, Fong Kwong (2016) Influences of Elevated Thermal Decomposition of Ammonia Gas on Indium Nitride Grown by Sol-Gel Spin Coating Method. In: Advance In Functional Materials.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1-999 Physics
spellingShingle QC1-999 Physics
Lee, Zhi Yin
Ng, Sha Shiong
Yami, Fong Kwong
Influences of Elevated Thermal Decomposition of Ammonia Gas on Indium Nitride Grown by Sol-Gel Spin Coating Method
description Indium nitride (lnN) with unique properties such as small energy band gap of 0.7 eV, high electron affinity and carrier density, is a potential semiconductor material in the applications of optical and electronic devices [I , 2] . Despite, the suitable growth conditions of InN are very stringent due to its low dissociation temperature and volatility of atomic nitrogen [3] . In this study, InN thin films grown on aluminium nitride (AIN) on p-type silicon(! II) [AIN/p-type Si(lll)] substrates are prepared via sol-gel spin coating method followed by nitridation process. Sol-gel spin coating is a low cost, fast processing and dilute solution based deposition method to produce thin and uniform film on substrate. The spin-coater is programmed to operate in a two-step spin profile; the first spinning speed is slower than the second. In subsequent, two three-zone tube furnaces connected in parallel manner are used for nitriding process; the passage of ammonia gas (NH3) into the first furnace is decomposed to produce reactive nitrogen radicals and brought into the second furnace for crystallization oflnN at 600°C. The effects of thermal decomposition of NH3 gas on structural properties and surface morphologies of the depos ited films are explored. X-ray diffraction results reveal that the crystalline quality of InN degrades markedly with increasing thermal decomposition ofNH3 gas from 700 to 850 °C; in which, the association of indium oxide in the deposited film is detected. In the meantime, thermal etching effect and formation of indium droplet on the film can be observed at 850 oc; the findings are aligned with the cross-sectional analysis obtained by energy dispersive spectroscopy attached field-emission scanning electron microscopy, where the film thickness is found to be reduced tremendously. This phenomenon is mainly due to the increase of hydrogen partial pressure at elevated thermal decomposition of N H3 gas. On the other hand, the film surface with densely packed InN grains and film thickness of approximately to 620 nm is obtained at 700 oc. The results deduce that this temperature is in favor for the growth of InN thin films .
format Conference or Workshop Item
author Lee, Zhi Yin
Ng, Sha Shiong
Yami, Fong Kwong
author_facet Lee, Zhi Yin
Ng, Sha Shiong
Yami, Fong Kwong
author_sort Lee, Zhi Yin
title Influences of Elevated Thermal Decomposition of Ammonia Gas on Indium Nitride Grown by Sol-Gel Spin Coating Method
title_short Influences of Elevated Thermal Decomposition of Ammonia Gas on Indium Nitride Grown by Sol-Gel Spin Coating Method
title_full Influences of Elevated Thermal Decomposition of Ammonia Gas on Indium Nitride Grown by Sol-Gel Spin Coating Method
title_fullStr Influences of Elevated Thermal Decomposition of Ammonia Gas on Indium Nitride Grown by Sol-Gel Spin Coating Method
title_full_unstemmed Influences of Elevated Thermal Decomposition of Ammonia Gas on Indium Nitride Grown by Sol-Gel Spin Coating Method
title_sort influences of elevated thermal decomposition of ammonia gas on indium nitride grown by sol-gel spin coating method
publishDate 2016
url http://eprints.usm.my/48787/1/NG8.pdf%20done.pdf
http://eprints.usm.my/48787/
_version_ 1696977050577928192
score 13.211869

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