Characteristics of p-Cu20/n-GaN Heterojunction Prepared via Reactive Radio Frequency Magnetron Sputtering
In this work, p-type cuprous oxide (Cu20) thin films were deposited on n-type gallium nitride (GaN) by radio frequency (RF) magnetron sputtering. The target used for deposition Cu20 films was 3 inch diameter solid copper target with purity of 99.99%. The reactive sputtering was performed in a mixtu...
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48736/1/Section%20C%20158.pdf%20cut.pdf http://eprints.usm.my/48736/ |
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