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Preliminary Studies of InGaON Thin Film on Si Substrate Using Simple Growth Technique

In this paper, we present a simple growth setup which is able to grow indium gallium oxynitride (lnGaON). This setup only involves furnace, ammonia gas, as well as gallium (Ga) and indium (In) sources. The characterization results heavily implied the growth of lnGaON on silicon (Si) substrate. Fi...

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Main Authors: Tneh, S.S., Beh, K.P., Yam, F.K., Ng, S.W., Lee, S.C., Ng, S.S., Hassan, Z.
Format: Conference or Workshop Item
Language:English
Published: 2015
Subjects:
QC1 Physics (General)
Online Access:http://eprints.usm.my/48435/1/Section%20C%20153.pdf%20cut.pdf
http://eprints.usm.my/48435/
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spelling my.usm.eprints.48435 http://eprints.usm.my/48435/ Preliminary Studies of InGaON Thin Film on Si Substrate Using Simple Growth Technique Tneh, S.S. Beh, K.P. Yam, F.K. Ng, S.W. Lee, S.C. Ng, S.S. Hassan, Z. QC1 Physics (General) In this paper, we present a simple growth setup which is able to grow indium gallium oxynitride (lnGaON). This setup only involves furnace, ammonia gas, as well as gallium (Ga) and indium (In) sources. The characterization results heavily implied the growth of lnGaON on silicon (Si) substrate. Firstly energy-dispersive x-rays (EDX) measurement confirmed the presence of In, Ga, 0 and N. Despite 0 being significant, Fourier transform infra-red (FTIR) spectroscopy and x-rays diffraction (XRD) results revealed the absence of metal oxides signals. Further analysis from both measurements showed the sample contained high In content, with crystalline structure resembled that of lnGaN, and was of (001) dominance. 2015-06 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48435/1/Section%20C%20153.pdf%20cut.pdf Tneh, S.S. and Beh, K.P. and Yam, F.K. and Ng, S.W. and Lee, S.C. and Ng, S.S. and Hassan, Z. (2015) Preliminary Studies of InGaON Thin Film on Si Substrate Using Simple Growth Technique. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015).
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1 Physics (General)
spellingShingle QC1 Physics (General)
Tneh, S.S.
Beh, K.P.
Yam, F.K.
Ng, S.W.
Lee, S.C.
Ng, S.S.
Hassan, Z.
Preliminary Studies of InGaON Thin Film on Si Substrate Using Simple Growth Technique
description In this paper, we present a simple growth setup which is able to grow indium gallium oxynitride (lnGaON). This setup only involves furnace, ammonia gas, as well as gallium (Ga) and indium (In) sources. The characterization results heavily implied the growth of lnGaON on silicon (Si) substrate. Firstly energy-dispersive x-rays (EDX) measurement confirmed the presence of In, Ga, 0 and N. Despite 0 being significant, Fourier transform infra-red (FTIR) spectroscopy and x-rays diffraction (XRD) results revealed the absence of metal oxides signals. Further analysis from both measurements showed the sample contained high In content, with crystalline structure resembled that of lnGaN, and was of (001) dominance.
format Conference or Workshop Item
author Tneh, S.S.
Beh, K.P.
Yam, F.K.
Ng, S.W.
Lee, S.C.
Ng, S.S.
Hassan, Z.
author_facet Tneh, S.S.
Beh, K.P.
Yam, F.K.
Ng, S.W.
Lee, S.C.
Ng, S.S.
Hassan, Z.
author_sort Tneh, S.S.
title Preliminary Studies of InGaON Thin Film on Si Substrate Using Simple Growth Technique
title_short Preliminary Studies of InGaON Thin Film on Si Substrate Using Simple Growth Technique
title_full Preliminary Studies of InGaON Thin Film on Si Substrate Using Simple Growth Technique
title_fullStr Preliminary Studies of InGaON Thin Film on Si Substrate Using Simple Growth Technique
title_full_unstemmed Preliminary Studies of InGaON Thin Film on Si Substrate Using Simple Growth Technique
title_sort preliminary studies of ingaon thin film on si substrate using simple growth technique
publishDate 2015
url http://eprints.usm.my/48435/1/Section%20C%20153.pdf%20cut.pdf
http://eprints.usm.my/48435/
_version_ 1724074451434209280
score 13.211869

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