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Growth Of Alxga1-Xn Thin Films On Silicon Using Sol-Gel Spin Coating Technique

Group-III nitrides such as aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) have potential applications for ultraviolet light emitting devices and high power devices. Nowadays, sophisticated and expensive growth techniques are used to synthesize these thin films. Thus, an alternative meth...

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Main Author: Isa, Nurul Atikah Mohd
Format: Thesis
Language:English
Published: 2018
Subjects:
P87-96 Communication. Mass media
Online Access:http://eprints.usm.my/48381/1/NURUL%20ATIKAH%20MOHD%20ISA_hj.pdf
http://eprints.usm.my/48381/
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spelling my.usm.eprints.48381 http://eprints.usm.my/48381/ Growth Of Alxga1-Xn Thin Films On Silicon Using Sol-Gel Spin Coating Technique Isa, Nurul Atikah Mohd P87-96 Communication. Mass media Group-III nitrides such as aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) have potential applications for ultraviolet light emitting devices and high power devices. Nowadays, sophisticated and expensive growth techniques are used to synthesize these thin films. Thus, an alternative method known as sol-gel spin coating method which is relatively cheap and simple as well as less explored was used to grow AlN and AlGaN thin films. In this work, the growth and characterization of AlN thin films on silicon (Si) substrate by sol-gel spin coating method under various nitridation parameters such as nitridation temperatures, nitridation durations, and ammonia (NH3) gas flow rates were investigated. For different nitridation temperatures, it was found that the full width at half maximum (FWHM) of AlN(002) diffraction peak of X-ray diffraction (XRD) and the E2(high) peak of Raman decreased, as the nitridation temperature increases from 1100 to 1150°C, which indicates the improvement of AlN crystal quality. The FWHM of both XRD and Raman increases when the nitridation temperature increased to 1200°C. This implied the degradation of AlN crystal. Moreover, the field-emission scanning electron microscopy (FESEM) image of sample nitridated at 1150°C showed a smooth and uniform surface with slightly bigger and densely packed grains as compared with that nitridated at 1100°C. As for nitridation durations, XRD showed the improvement of crystalline quality of AlN with increasing nitridation duration from 45 to 60 min. 2018-09 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/48381/1/NURUL%20ATIKAH%20MOHD%20ISA_hj.pdf Isa, Nurul Atikah Mohd (2018) Growth Of Alxga1-Xn Thin Films On Silicon Using Sol-Gel Spin Coating Technique. Masters thesis, Universiti Sains Malaysia.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic P87-96 Communication. Mass media
spellingShingle P87-96 Communication. Mass media
Isa, Nurul Atikah Mohd
Growth Of Alxga1-Xn Thin Films On Silicon Using Sol-Gel Spin Coating Technique
description Group-III nitrides such as aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) have potential applications for ultraviolet light emitting devices and high power devices. Nowadays, sophisticated and expensive growth techniques are used to synthesize these thin films. Thus, an alternative method known as sol-gel spin coating method which is relatively cheap and simple as well as less explored was used to grow AlN and AlGaN thin films. In this work, the growth and characterization of AlN thin films on silicon (Si) substrate by sol-gel spin coating method under various nitridation parameters such as nitridation temperatures, nitridation durations, and ammonia (NH3) gas flow rates were investigated. For different nitridation temperatures, it was found that the full width at half maximum (FWHM) of AlN(002) diffraction peak of X-ray diffraction (XRD) and the E2(high) peak of Raman decreased, as the nitridation temperature increases from 1100 to 1150°C, which indicates the improvement of AlN crystal quality. The FWHM of both XRD and Raman increases when the nitridation temperature increased to 1200°C. This implied the degradation of AlN crystal. Moreover, the field-emission scanning electron microscopy (FESEM) image of sample nitridated at 1150°C showed a smooth and uniform surface with slightly bigger and densely packed grains as compared with that nitridated at 1100°C. As for nitridation durations, XRD showed the improvement of crystalline quality of AlN with increasing nitridation duration from 45 to 60 min.
format Thesis
author Isa, Nurul Atikah Mohd
author_facet Isa, Nurul Atikah Mohd
author_sort Isa, Nurul Atikah Mohd
title Growth Of Alxga1-Xn Thin Films On Silicon Using Sol-Gel Spin Coating Technique
title_short Growth Of Alxga1-Xn Thin Films On Silicon Using Sol-Gel Spin Coating Technique
title_full Growth Of Alxga1-Xn Thin Films On Silicon Using Sol-Gel Spin Coating Technique
title_fullStr Growth Of Alxga1-Xn Thin Films On Silicon Using Sol-Gel Spin Coating Technique
title_full_unstemmed Growth Of Alxga1-Xn Thin Films On Silicon Using Sol-Gel Spin Coating Technique
title_sort growth of alxga1-xn thin films on silicon using sol-gel spin coating technique
publishDate 2018
url http://eprints.usm.my/48381/1/NURUL%20ATIKAH%20MOHD%20ISA_hj.pdf
http://eprints.usm.my/48381/
_version_ 1692992783604776960
score 13.211869

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