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Structural, Electrical, And Optical Properties Of Indium Nitride Thin Films

InN is the least studied material among III-V nitrides, due to the challenges associated with its low dissociation temperature and lack of suitable substrate. The discovery of a narrow band gap (0.7 eV) renewed the interest of researchers to carry out the detailed study of InN for optoelectronic app...

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Main Author: Ganie, Umar Bashir
Format: Thesis
Language:English
Published: 2018
Subjects:
QC1 Physics (General)
Online Access:http://eprints.usm.my/44275/1/UMAR%20BASHIR%20GANIE.pdf
http://eprints.usm.my/44275/
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spelling my.usm.eprints.44275 http://eprints.usm.my/44275/ Structural, Electrical, And Optical Properties Of Indium Nitride Thin Films Ganie, Umar Bashir QC1 Physics (General) InN is the least studied material among III-V nitrides, due to the challenges associated with its low dissociation temperature and lack of suitable substrate. The discovery of a narrow band gap (0.7 eV) renewed the interest of researchers to carry out the detailed study of InN for optoelectronic applications. The commonly used growth techniques include molecular beam epitaxy and metalorganic chemical vapor deposition. Radio frequency (RF) sputtering is also commonly used for the growth of thin films and nanostructures, but it usually produces polycrystalline films with high carrier concentration and low electron mobility. However, the benefit of using RF sputtering are its low cost, easy to handle and produces InN films even at room temperature which is not possible with other mentioned techniques. 2018-04 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/44275/1/UMAR%20BASHIR%20GANIE.pdf Ganie, Umar Bashir (2018) Structural, Electrical, And Optical Properties Of Indium Nitride Thin Films. Masters thesis, Universiti Sains Malaysia.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1 Physics (General)
spellingShingle QC1 Physics (General)
Ganie, Umar Bashir
Structural, Electrical, And Optical Properties Of Indium Nitride Thin Films
description InN is the least studied material among III-V nitrides, due to the challenges associated with its low dissociation temperature and lack of suitable substrate. The discovery of a narrow band gap (0.7 eV) renewed the interest of researchers to carry out the detailed study of InN for optoelectronic applications. The commonly used growth techniques include molecular beam epitaxy and metalorganic chemical vapor deposition. Radio frequency (RF) sputtering is also commonly used for the growth of thin films and nanostructures, but it usually produces polycrystalline films with high carrier concentration and low electron mobility. However, the benefit of using RF sputtering are its low cost, easy to handle and produces InN films even at room temperature which is not possible with other mentioned techniques.
format Thesis
author Ganie, Umar Bashir
author_facet Ganie, Umar Bashir
author_sort Ganie, Umar Bashir
title Structural, Electrical, And Optical Properties Of Indium Nitride Thin Films
title_short Structural, Electrical, And Optical Properties Of Indium Nitride Thin Films
title_full Structural, Electrical, And Optical Properties Of Indium Nitride Thin Films
title_fullStr Structural, Electrical, And Optical Properties Of Indium Nitride Thin Films
title_full_unstemmed Structural, Electrical, And Optical Properties Of Indium Nitride Thin Films
title_sort structural, electrical, and optical properties of indium nitride thin films
publishDate 2018
url http://eprints.usm.my/44275/1/UMAR%20BASHIR%20GANIE.pdf
http://eprints.usm.my/44275/
_version_ 1643710962711134208
score 13.211869

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