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Simulation Of Short Channel Vertical Mosfet Structures

Recently, the end of the planar bulk complementary metal oxide semiconductor (CMOS) had become visible. Vertical metal oxide semiconductor field effect transistor (VMOST) structures are one of the promising structures for future CMOS technologies. There are still a lot of research needs to be done o...

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Main Author: Ooi , Poh Kok
Format: Thesis
Language:English
Published: 2010
Subjects:
QC1 Physics (General)
Online Access:http://eprints.usm.my/42269/1/OOI_POH_KOK.pdf
http://eprints.usm.my/42269/
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spelling my.usm.eprints.42269 http://eprints.usm.my/42269/ Simulation Of Short Channel Vertical Mosfet Structures Ooi , Poh Kok QC1 Physics (General) Recently, the end of the planar bulk complementary metal oxide semiconductor (CMOS) had become visible. Vertical metal oxide semiconductor field effect transistor (VMOST) structures are one of the promising structures for future CMOS technologies. There are still a lot of research needs to be done on the VMOST structures to mature as that of planar CMOS technologies. It is well known that there are many parameters needed to be considered in designing MOSFET. With the aid of computer-aided design, we can optimize the MOSFET parameters faster and with lower cost. 2010-12 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/42269/1/OOI_POH_KOK.pdf Ooi , Poh Kok (2010) Simulation Of Short Channel Vertical Mosfet Structures. Masters thesis, Universiti Sains Malaysia.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1 Physics (General)
spellingShingle QC1 Physics (General)
Ooi , Poh Kok
Simulation Of Short Channel Vertical Mosfet Structures
description Recently, the end of the planar bulk complementary metal oxide semiconductor (CMOS) had become visible. Vertical metal oxide semiconductor field effect transistor (VMOST) structures are one of the promising structures for future CMOS technologies. There are still a lot of research needs to be done on the VMOST structures to mature as that of planar CMOS technologies. It is well known that there are many parameters needed to be considered in designing MOSFET. With the aid of computer-aided design, we can optimize the MOSFET parameters faster and with lower cost.
format Thesis
author Ooi , Poh Kok
author_facet Ooi , Poh Kok
author_sort Ooi , Poh Kok
title Simulation Of Short Channel Vertical Mosfet Structures
title_short Simulation Of Short Channel Vertical Mosfet Structures
title_full Simulation Of Short Channel Vertical Mosfet Structures
title_fullStr Simulation Of Short Channel Vertical Mosfet Structures
title_full_unstemmed Simulation Of Short Channel Vertical Mosfet Structures
title_sort simulation of short channel vertical mosfet structures
publishDate 2010
url http://eprints.usm.my/42269/1/OOI_POH_KOK.pdf
http://eprints.usm.my/42269/
_version_ 1643710457725321216
score 13.211869

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