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Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications

The main goal of this work presented in this thesis was to fabricate nanostructures of GaN using two low-cost electrochemical techniques namely photoelectrochemical etching (PECE) and electrochemical deposition (ECD). In the first category of this work, the porous GaN was generated using photoelectr...

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Main Author: Al-Heuseen, Khalled Mhammad Kallef
Format: Thesis
Language:English
Published: 2011
Subjects:
QC1 Physics (General)
Online Access:http://eprints.usm.my/41902/1/KHALLED_MHAMMAD_KALLEF_AL-HEUSEEN.pdf
http://eprints.usm.my/41902/
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spelling my.usm.eprints.41902 http://eprints.usm.my/41902/ Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications Al-Heuseen, Khalled Mhammad Kallef QC1 Physics (General) The main goal of this work presented in this thesis was to fabricate nanostructures of GaN using two low-cost electrochemical techniques namely photoelectrochemical etching (PECE) and electrochemical deposition (ECD). In the first category of this work, the porous GaN was generated using photoelectrochemical etching techniques under different conditions, i.e. current density, different duration of etching and different electrolytes. The results showed that the average pore size was sensitive to the current density, and different electrolytes generated different morphology. 2011-05 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/41902/1/KHALLED_MHAMMAD_KALLEF_AL-HEUSEEN.pdf Al-Heuseen, Khalled Mhammad Kallef (2011) Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications. PhD thesis, Universiti Sains Malaysia.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1 Physics (General)
spellingShingle QC1 Physics (General)
Al-Heuseen, Khalled Mhammad Kallef
Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
description The main goal of this work presented in this thesis was to fabricate nanostructures of GaN using two low-cost electrochemical techniques namely photoelectrochemical etching (PECE) and electrochemical deposition (ECD). In the first category of this work, the porous GaN was generated using photoelectrochemical etching techniques under different conditions, i.e. current density, different duration of etching and different electrolytes. The results showed that the average pore size was sensitive to the current density, and different electrolytes generated different morphology.
format Thesis
author Al-Heuseen, Khalled Mhammad Kallef
author_facet Al-Heuseen, Khalled Mhammad Kallef
author_sort Al-Heuseen, Khalled Mhammad Kallef
title Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
title_short Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
title_full Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
title_fullStr Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
title_full_unstemmed Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
title_sort synthesis of gallium nitride (gan) nanostructures by electrochemical techniques for sensing applications
publishDate 2011
url http://eprints.usm.my/41902/1/KHALLED_MHAMMAD_KALLEF_AL-HEUSEEN.pdf
http://eprints.usm.my/41902/
_version_ 1643710354890424320
score 13.211869

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