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Design And Simulation Of Cmos Based Low Voltage Bandgap Reference Circuitry

The objective of this thesis is to study the performance of the BGR circuit by using Metal Oxide Semiconductor (MOS) transistor to replace the Bipolar Junction Transistor (BJT) circuit. As known bipolar transistor is better characterize over temperature. However, bipolar transistor required a high t...

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Main Author: Tan , Chin Ling
Format: Thesis
Language:English
Published: 2016
Subjects:
TK7800-8360 Electronics
Online Access:http://eprints.usm.my/41320/1/TAN_CHIN_LING_24_Pages.pdf
http://eprints.usm.my/41320/
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spelling my.usm.eprints.41320 http://eprints.usm.my/41320/ Design And Simulation Of Cmos Based Low Voltage Bandgap Reference Circuitry Tan , Chin Ling TK7800-8360 Electronics The objective of this thesis is to study the performance of the BGR circuit by using Metal Oxide Semiconductor (MOS) transistor to replace the Bipolar Junction Transistor (BJT) circuit. As known bipolar transistor is better characterize over temperature. However, bipolar transistor required a high threshold voltage to operate as compared to MOS transistor; Therefore, the bipolar transistor has replaced by MOS transistor to improve performance of BGR for low voltage application lower than 1.2V and to reduce fabrication process. The result of the Op-Amp has shown it able to achieve 74.34dB gain as well as 62.16 degree of phase margin, which stable for integration with BGR circuit. After that, the Op-Amp circuit is then incorporate into the design of for a complete BGR architecture. The proposed design of BGR circuit able to achieve similar performance, which produce the maximum low voltage about 446.05mV and the minimum of 440.2mV at a temperature range of -10℃ to 100 ℃. Besides, the reference voltage generated is stable after the supply voltage higher than 1.2V, which meant the circuit are still able to provide accurate and stable reference voltage for a variety of supply voltage changes. Furthermore, the circuit has high PSRR values at -70.59 dB, to ensure enough headroom for noise rejection from the supply voltage. However, the circuit has a higher temperature coefficient which is 118.12 ppm /℃ . Lastly, the design completed with post-layout simulation and the area of BGR circuit including dummy are being consume of 133μm x 140μm of die area. 2016 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/41320/1/TAN_CHIN_LING_24_Pages.pdf Tan , Chin Ling (2016) Design And Simulation Of Cmos Based Low Voltage Bandgap Reference Circuitry. Masters thesis, Universiti Sains Malaysia.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic TK7800-8360 Electronics
spellingShingle TK7800-8360 Electronics
Tan , Chin Ling
Design And Simulation Of Cmos Based Low Voltage Bandgap Reference Circuitry
description The objective of this thesis is to study the performance of the BGR circuit by using Metal Oxide Semiconductor (MOS) transistor to replace the Bipolar Junction Transistor (BJT) circuit. As known bipolar transistor is better characterize over temperature. However, bipolar transistor required a high threshold voltage to operate as compared to MOS transistor; Therefore, the bipolar transistor has replaced by MOS transistor to improve performance of BGR for low voltage application lower than 1.2V and to reduce fabrication process. The result of the Op-Amp has shown it able to achieve 74.34dB gain as well as 62.16 degree of phase margin, which stable for integration with BGR circuit. After that, the Op-Amp circuit is then incorporate into the design of for a complete BGR architecture. The proposed design of BGR circuit able to achieve similar performance, which produce the maximum low voltage about 446.05mV and the minimum of 440.2mV at a temperature range of -10℃ to 100 ℃. Besides, the reference voltage generated is stable after the supply voltage higher than 1.2V, which meant the circuit are still able to provide accurate and stable reference voltage for a variety of supply voltage changes. Furthermore, the circuit has high PSRR values at -70.59 dB, to ensure enough headroom for noise rejection from the supply voltage. However, the circuit has a higher temperature coefficient which is 118.12 ppm /℃ . Lastly, the design completed with post-layout simulation and the area of BGR circuit including dummy are being consume of 133μm x 140μm of die area.
format Thesis
author Tan , Chin Ling
author_facet Tan , Chin Ling
author_sort Tan , Chin Ling
title Design And Simulation Of Cmos Based Low Voltage Bandgap Reference Circuitry
title_short Design And Simulation Of Cmos Based Low Voltage Bandgap Reference Circuitry
title_full Design And Simulation Of Cmos Based Low Voltage Bandgap Reference Circuitry
title_fullStr Design And Simulation Of Cmos Based Low Voltage Bandgap Reference Circuitry
title_full_unstemmed Design And Simulation Of Cmos Based Low Voltage Bandgap Reference Circuitry
title_sort design and simulation of cmos based low voltage bandgap reference circuitry
publishDate 2016
url http://eprints.usm.my/41320/1/TAN_CHIN_LING_24_Pages.pdf
http://eprints.usm.my/41320/
_version_ 1643710188029476864
score 13.211869

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