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Fast Transient Simulations From S-Parameters With Improved Reference Impedance

As a design becomes more sophisticated, analyzing it becomes more complicated, and supporting high data speeds and high operating frequencies becomes more challenging. Conventional transient simulation can be a troublesome and a computationally expensive procedure, as the process takes a long time...

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Main Author: Khairulzaman, Mohd Ridzuan
Format: Thesis
Language:English
Published: 2015
Subjects:
TK7800-8360 Electronics
Online Access:http://eprints.usm.my/41223/1/MOHD_RIDZUAN_BIN_KHAIRULZAMAN_24_Pages.pdf
http://eprints.usm.my/41223/
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spelling my.usm.eprints.41223 http://eprints.usm.my/41223/ Fast Transient Simulations From S-Parameters With Improved Reference Impedance Khairulzaman, Mohd Ridzuan TK7800-8360 Electronics As a design becomes more sophisticated, analyzing it becomes more complicated, and supporting high data speeds and high operating frequencies becomes more challenging. Conventional transient simulation can be a troublesome and a computationally expensive procedure, as the process takes a long time to complete. Hence, a fast transient simulation is utilized based on scattering parameter (S-parameter) convolution. This alternative approach to the S-parameter offers stability, efficiency and robust computation. In this research, the S-parameter frequency domain convolution was presented, which was later converted to impulse response or time domain data using the inverse Fast Fourier Transform (IFFT) algorithm for the fast transient simulation of multiport interconnect network or typically addressed as a black box model. Subsequently, the S-parameter convolution can be further improved by optimizing the reference system of the model. An improvement by 64% and 29.5% of IFFT point usage numbers with Black Box 1 and Black Box 2. These results respectively were obtained based on optimal reference impedance assigned in S-parameter synthesis on black box models, thus speeding up the convolution program, compared to the nominal reference impedance of 50Ω used to perform the fast transient simulation. Besides, the optimization routine implemented on the design has smoothed the magnitude of the waveform and there is no significant effect observed on the time domain response. 2015 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/41223/1/MOHD_RIDZUAN_BIN_KHAIRULZAMAN_24_Pages.pdf Khairulzaman, Mohd Ridzuan (2015) Fast Transient Simulations From S-Parameters With Improved Reference Impedance. Masters thesis, Universiti Sains Malaysia.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic TK7800-8360 Electronics
spellingShingle TK7800-8360 Electronics
Khairulzaman, Mohd Ridzuan
Fast Transient Simulations From S-Parameters With Improved Reference Impedance
description As a design becomes more sophisticated, analyzing it becomes more complicated, and supporting high data speeds and high operating frequencies becomes more challenging. Conventional transient simulation can be a troublesome and a computationally expensive procedure, as the process takes a long time to complete. Hence, a fast transient simulation is utilized based on scattering parameter (S-parameter) convolution. This alternative approach to the S-parameter offers stability, efficiency and robust computation. In this research, the S-parameter frequency domain convolution was presented, which was later converted to impulse response or time domain data using the inverse Fast Fourier Transform (IFFT) algorithm for the fast transient simulation of multiport interconnect network or typically addressed as a black box model. Subsequently, the S-parameter convolution can be further improved by optimizing the reference system of the model. An improvement by 64% and 29.5% of IFFT point usage numbers with Black Box 1 and Black Box 2. These results respectively were obtained based on optimal reference impedance assigned in S-parameter synthesis on black box models, thus speeding up the convolution program, compared to the nominal reference impedance of 50Ω used to perform the fast transient simulation. Besides, the optimization routine implemented on the design has smoothed the magnitude of the waveform and there is no significant effect observed on the time domain response.
format Thesis
author Khairulzaman, Mohd Ridzuan
author_facet Khairulzaman, Mohd Ridzuan
author_sort Khairulzaman, Mohd Ridzuan
title Fast Transient Simulations From S-Parameters With Improved Reference Impedance
title_short Fast Transient Simulations From S-Parameters With Improved Reference Impedance
title_full Fast Transient Simulations From S-Parameters With Improved Reference Impedance
title_fullStr Fast Transient Simulations From S-Parameters With Improved Reference Impedance
title_full_unstemmed Fast Transient Simulations From S-Parameters With Improved Reference Impedance
title_sort fast transient simulations from s-parameters with improved reference impedance
publishDate 2015
url http://eprints.usm.my/41223/1/MOHD_RIDZUAN_BIN_KHAIRULZAMAN_24_Pages.pdf
http://eprints.usm.my/41223/
_version_ 1643710162790252544
score 13.244369

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