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Studies on Transition Metal Impregnated Mx(lnGa)1_XN modulated structures for wide band gap multi-junction Solar cells.

GaN and Ga-rich InGaN have been considered as the most important and indispensable materials used for the fabrication of efficient thin film solar cells which are active in entire visible and part of the near UV spectral regions. Initially, Al doped Ga203 thin film was synthesized using staking me...

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Main Author: Devarajan, Mutharasu
Format: Monograph
Published: Universiti Sains Malaysia 2013
Subjects:
QC1-999 Physics
Online Access:http://eprints.usm.my/32555/
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id my.usm.eprints.32555
record_format eprints
spelling my.usm.eprints.32555 http://eprints.usm.my/32555/ Studies on Transition Metal Impregnated Mx(lnGa)1_XN modulated structures for wide band gap multi-junction Solar cells. Devarajan, Mutharasu QC1-999 Physics GaN and Ga-rich InGaN have been considered as the most important and indispensable materials used for the fabrication of efficient thin film solar cells which are active in entire visible and part of the near UV spectral regions. Initially, Al doped Ga203 thin film was synthesized using staking method and doping occurs at >400°C. Non-stoichiometry Al doped Ga203 thin film was observed by post annealing. Universiti Sains Malaysia 2013 Monograph NonPeerReviewed Devarajan, Mutharasu (2013) Studies on Transition Metal Impregnated Mx(lnGa)1_XN modulated structures for wide band gap multi-junction Solar cells. Project Report. Universiti Sains Malaysia. (Submitted)
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
topic QC1-999 Physics
spellingShingle QC1-999 Physics
Devarajan, Mutharasu
Studies on Transition Metal Impregnated Mx(lnGa)1_XN modulated structures for wide band gap multi-junction Solar cells.
description GaN and Ga-rich InGaN have been considered as the most important and indispensable materials used for the fabrication of efficient thin film solar cells which are active in entire visible and part of the near UV spectral regions. Initially, Al doped Ga203 thin film was synthesized using staking method and doping occurs at >400°C. Non-stoichiometry Al doped Ga203 thin film was observed by post annealing.
format Monograph
author Devarajan, Mutharasu
author_facet Devarajan, Mutharasu
author_sort Devarajan, Mutharasu
title Studies on Transition Metal Impregnated Mx(lnGa)1_XN modulated structures for wide band gap multi-junction Solar cells.
title_short Studies on Transition Metal Impregnated Mx(lnGa)1_XN modulated structures for wide band gap multi-junction Solar cells.
title_full Studies on Transition Metal Impregnated Mx(lnGa)1_XN modulated structures for wide band gap multi-junction Solar cells.
title_fullStr Studies on Transition Metal Impregnated Mx(lnGa)1_XN modulated structures for wide band gap multi-junction Solar cells.
title_full_unstemmed Studies on Transition Metal Impregnated Mx(lnGa)1_XN modulated structures for wide band gap multi-junction Solar cells.
title_sort studies on transition metal impregnated mx(lnga)1_xn modulated structures for wide band gap multi-junction solar cells.
publisher Universiti Sains Malaysia
publishDate 2013
url http://eprints.usm.my/32555/
_version_ 1643707679483363328
score 13.211869

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