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Morphological And Optical Properties Of Porous Gallium Nitride (Gan) Fabricated By Photoelectrochemical Process

Kajian mengenai fabrikasi filem nipis GaN berliang melalui proses fotoelektrokimia (PEC) telah dilaporkan. An investigation into the fabrication of porous GaN thin films via photoelectrochemical (PEC) process was reported. The main objective for this research work is to investigate the morpho...

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Main Author: Cheah , Sook Fong
Format: Thesis
Language:English
Published: 2015
Subjects:
QC1 Physics (General)
Online Access:http://eprints.usm.my/30084/1/Cheah_Sook_Fong.pdf
http://eprints.usm.my/30084/
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spelling my.usm.eprints.30084 http://eprints.usm.my/30084/ Morphological And Optical Properties Of Porous Gallium Nitride (Gan) Fabricated By Photoelectrochemical Process Cheah , Sook Fong QC1 Physics (General) Kajian mengenai fabrikasi filem nipis GaN berliang melalui proses fotoelektrokimia (PEC) telah dilaporkan. An investigation into the fabrication of porous GaN thin films via photoelectrochemical (PEC) process was reported. The main objective for this research work is to investigate the morphological and optical properties of fabricated porous GaN thin films. 2015-01 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/30084/1/Cheah_Sook_Fong.pdf Cheah , Sook Fong (2015) Morphological And Optical Properties Of Porous Gallium Nitride (Gan) Fabricated By Photoelectrochemical Process. Masters thesis, Universiti Sains Malaysia.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1 Physics (General)
spellingShingle QC1 Physics (General)
Cheah , Sook Fong
Morphological And Optical Properties Of Porous Gallium Nitride (Gan) Fabricated By Photoelectrochemical Process
description Kajian mengenai fabrikasi filem nipis GaN berliang melalui proses fotoelektrokimia (PEC) telah dilaporkan. An investigation into the fabrication of porous GaN thin films via photoelectrochemical (PEC) process was reported. The main objective for this research work is to investigate the morphological and optical properties of fabricated porous GaN thin films.
format Thesis
author Cheah , Sook Fong
author_facet Cheah , Sook Fong
author_sort Cheah , Sook Fong
title Morphological And Optical Properties Of Porous Gallium Nitride (Gan) Fabricated By Photoelectrochemical Process
title_short Morphological And Optical Properties Of Porous Gallium Nitride (Gan) Fabricated By Photoelectrochemical Process
title_full Morphological And Optical Properties Of Porous Gallium Nitride (Gan) Fabricated By Photoelectrochemical Process
title_fullStr Morphological And Optical Properties Of Porous Gallium Nitride (Gan) Fabricated By Photoelectrochemical Process
title_full_unstemmed Morphological And Optical Properties Of Porous Gallium Nitride (Gan) Fabricated By Photoelectrochemical Process
title_sort morphological and optical properties of porous gallium nitride (gan) fabricated by photoelectrochemical process
publishDate 2015
url http://eprints.usm.my/30084/1/Cheah_Sook_Fong.pdf
http://eprints.usm.my/30084/
_version_ 1643707073488224256
score 13.211869

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