Cover Image

Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour

The need to thermally grow a thick SiO2 film (>50 nm) with high breakdown voltage (> 5 MV/cm at 1 uA/cm2) is crucial for high power devices (> 600 V) applications. Keperluan menghasilkan filem tebal SiO2(> 50 nm) dengan keupayaan pecahan voltan yang lebih tinggi (> 5 MV/cm pada 1 uA/...

Full description

Saved in:
Bibliographic Details
Main Author: Banu , Poobalan
Format: Thesis
Language:English
Published: 2014
Subjects:
TN1-997 Mining engineering. Metallurgy
Online Access:http://eprints.usm.my/29000/1/DEVELOPMENT_OF_SiO2_ON_4H-SiC_BY_DIRECT_THERMAL_OXIDATION_AND_POST_OXIDATION_ANNEALING_IN_HNO3_%26_H2O_VAPOUR.pdf
http://eprints.usm.my/29000/
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.usm.eprints.29000
record_format eprints
spelling my.usm.eprints.29000 http://eprints.usm.my/29000/ Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour Banu , Poobalan TN1-997 Mining engineering. Metallurgy The need to thermally grow a thick SiO2 film (>50 nm) with high breakdown voltage (> 5 MV/cm at 1 uA/cm2) is crucial for high power devices (> 600 V) applications. Keperluan menghasilkan filem tebal SiO2(> 50 nm) dengan keupayaan pecahan voltan yang lebih tinggi (> 5 MV/cm pada 1 uA/cm2) melalui kaedah pengoksidaan terma adalah sangat penting bagi aplikasi peranti kuasa tinggi (> 600 V). 2014 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/29000/1/DEVELOPMENT_OF_SiO2_ON_4H-SiC_BY_DIRECT_THERMAL_OXIDATION_AND_POST_OXIDATION_ANNEALING_IN_HNO3_%26_H2O_VAPOUR.pdf Banu , Poobalan (2014) Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour. PhD thesis, Universiti Sains Malaysia.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic TN1-997 Mining engineering. Metallurgy
spellingShingle TN1-997 Mining engineering. Metallurgy
Banu , Poobalan
Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour
description The need to thermally grow a thick SiO2 film (>50 nm) with high breakdown voltage (> 5 MV/cm at 1 uA/cm2) is crucial for high power devices (> 600 V) applications. Keperluan menghasilkan filem tebal SiO2(> 50 nm) dengan keupayaan pecahan voltan yang lebih tinggi (> 5 MV/cm pada 1 uA/cm2) melalui kaedah pengoksidaan terma adalah sangat penting bagi aplikasi peranti kuasa tinggi (> 600 V).
format Thesis
author Banu , Poobalan
author_facet Banu , Poobalan
author_sort Banu , Poobalan
title Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour
title_short Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour
title_full Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour
title_fullStr Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour
title_full_unstemmed Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour
title_sort development of sio2 on 4h-sic by direct thermal oxidation and post oxidation annealing in hno3 & h2o vapour
publishDate 2014
url http://eprints.usm.my/29000/1/DEVELOPMENT_OF_SiO2_ON_4H-SiC_BY_DIRECT_THERMAL_OXIDATION_AND_POST_OXIDATION_ANNEALING_IN_HNO3_%26_H2O_VAPOUR.pdf
http://eprints.usm.my/29000/
_version_ 1643706790764871680
score 13.211869

Similar Items