A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.
High quality Gan films are usually produced at high growth temperatures (> 1OOO°C) with the use of substrates such as sapphire (Ah03) or silicon carbide (SiC).Therefore, for a low production cost purpose, there has been a growing interest in producing lower growth temperatures Gan films as well a...
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| Main Authors: | , , , , |
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| Format: | Monograph |
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Universiti Sains Malaysia
2000
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| Subjects: | |
| Online Access: | http://eprints.usm.my/10768/ |
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| Summary: | High quality Gan films are usually produced at high growth temperatures (> 1OOO°C) with the use of substrates such as sapphire (Ah03) or silicon carbide (SiC).Therefore, for a low production cost purpose, there has been a growing interest in producing lower growth temperatures Gan films as well as Gan based devices with low cost substrates such as silicon.
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