Cover Image

Determination of dynamic parameters for HSPICE IGBT model using curve-fitting optimisation method

The two important characteristics of an IGBT, which should be considered in device modelling, are the conduction (static) and the switching (dynamic) characteristics. The conduction characteristic parameters were discussed previously (Mariun et al, 1997) and here only the dynamic parameters are pres...

Full description

Saved in:
Bibliographic Details
Main Authors: Mariun, Norman, Aris, Ishak, Shepherd, W.
Format: Conference or Workshop Item
Language:English
Published: IEEE 1998
Online Access:http://psasir.upm.edu.my/id/eprint/51238/1/51238.pdf
http://psasir.upm.edu.my/id/eprint/51238/
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.upm.eprints.51238
record_format eprints
spelling my.upm.eprints.512382017-07-04T03:28:23Z http://psasir.upm.edu.my/id/eprint/51238/ Determination of dynamic parameters for HSPICE IGBT model using curve-fitting optimisation method Mariun, Norman Aris, Ishak Shepherd, W. The two important characteristics of an IGBT, which should be considered in device modelling, are the conduction (static) and the switching (dynamic) characteristics. The conduction characteristic parameters were discussed previously (Mariun et al, 1997) and here only the dynamic parameters are presented briefly to give background before detailed development of the model is presented. The curve-fitting optimisation method available in HSPICE is used to determine the model parameters and the results are compared with laboratory test results and are found to be in good agreement. IEEE 1998 Conference or Workshop Item PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/51238/1/51238.pdf Mariun, Norman and Aris, Ishak and Shepherd, W. (1998) Determination of dynamic parameters for HSPICE IGBT model using curve-fitting optimisation method. In: 1998 IEEE International Conference on Semiconductor Electronics (lCSE'98), 24-26 Nov. 1998, Equatorial Hotel, Bangi. (pp. 138-142). 10.1109/SMELEC.1998.781167
institution Universiti Putra Malaysia
building UPM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Putra Malaysia
content_source UPM Institutional Repository
url_provider http://psasir.upm.edu.my/
language English
description The two important characteristics of an IGBT, which should be considered in device modelling, are the conduction (static) and the switching (dynamic) characteristics. The conduction characteristic parameters were discussed previously (Mariun et al, 1997) and here only the dynamic parameters are presented briefly to give background before detailed development of the model is presented. The curve-fitting optimisation method available in HSPICE is used to determine the model parameters and the results are compared with laboratory test results and are found to be in good agreement.
format Conference or Workshop Item
author Mariun, Norman
Aris, Ishak
Shepherd, W.
spellingShingle Mariun, Norman
Aris, Ishak
Shepherd, W.
Determination of dynamic parameters for HSPICE IGBT model using curve-fitting optimisation method
author_facet Mariun, Norman
Aris, Ishak
Shepherd, W.
author_sort Mariun, Norman
title Determination of dynamic parameters for HSPICE IGBT model using curve-fitting optimisation method
title_short Determination of dynamic parameters for HSPICE IGBT model using curve-fitting optimisation method
title_full Determination of dynamic parameters for HSPICE IGBT model using curve-fitting optimisation method
title_fullStr Determination of dynamic parameters for HSPICE IGBT model using curve-fitting optimisation method
title_full_unstemmed Determination of dynamic parameters for HSPICE IGBT model using curve-fitting optimisation method
title_sort determination of dynamic parameters for hspice igbt model using curve-fitting optimisation method
publisher IEEE
publishDate 1998
url http://psasir.upm.edu.my/id/eprint/51238/1/51238.pdf
http://psasir.upm.edu.my/id/eprint/51238/
_version_ 1643834896056057856
score 13.211869

Similar Items