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Film electrodes deposited from Cu2SnSe3 source in comparison with those deposited from SnSe and Cu2ZnSnSe4 sources by thermal vacuum evaporation: effect of argon gas flow rate

Addition of argon gas, with different flow rates, to vacuum evaporation deposition of film electrodes from Cu2SnSe3 source, affect nature and properties of the resulting films. While keeping other factors constant, it is possible to control nature and properties of the resulting films simply by cont...

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Main Authors: Sabli, Nordin, Talib, Zainal Abidin, Mat Yunus, Wan Mahmood, Zainal, Zulkarnain, Hilal, Hikmat S., Fujii, Masatoshi
Format: Article
Language:English
Published: Elsevier 2014
Online Access:http://psasir.upm.edu.my/id/eprint/37666/1/Film%20electrodes%20deposited%20from%20Cu2SnSe3%20source%20in%20comparison%20with%20those%20deposited%20from%20SnSe%20and%20Cu2ZnSnSe4%20sources%20by%20thermal%20vacuum%20evaporation.pdf
http://psasir.upm.edu.my/id/eprint/37666/
http://www.sciencedirect.com/science/article/pii/S0013468614014169#authorabs00151
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spelling my.upm.eprints.376662016-01-22T03:56:36Z http://psasir.upm.edu.my/id/eprint/37666/ Film electrodes deposited from Cu2SnSe3 source in comparison with those deposited from SnSe and Cu2ZnSnSe4 sources by thermal vacuum evaporation: effect of argon gas flow rate Sabli, Nordin Talib, Zainal Abidin Mat Yunus, Wan Mahmood Zainal, Zulkarnain Hilal, Hikmat S. Fujii, Masatoshi Addition of argon gas, with different flow rates, to vacuum evaporation deposition of film electrodes from Cu2SnSe3 source, affect nature and properties of the resulting films. While keeping other factors constant, it is possible to control nature and properties of the resulting films simply by controlling the argon gas flow rate. This work shows that films deposited from Cu2SnSe3 under high argon gas flow rate (25 cm3/min) involved SnSe as a major compound, with low concentration of Cu dopant. The film showed higher photoresponse than those deposited from pristine SnSe source. Under lower argon gas flow rates, the resulting films were dominated by the ternary source compound itself, which also showed lower photoresponse than that deposited under higher flow rate. Structure, morphology, chemical composition, optical and photo-electrochemical characteristics have all been studied for films deposited from Cu2SnSe3 under different argon gas flow rates, in parallel with earlier films deposited from SnSe and Cu2ZnSnSe4. The films deposited from Cu2SnSe3 or Cu2ZnSnSe4 under high argon gas flow rate showed a p-type semiconductor behavior with energy gap of about 1.0 eV which confirms the existence of SnSe as a dominant component in each case. A mechanism, which is mainly based on a model of elastic collisions, is proposed to explain the production of SnSe films from the ternary and quaternary sources. On the other hand, the presence of low concentrations of Cu or/and Zn species in the resulting SnSe films is presumably responsible for enhanced photoresponse, as compared to films deposited from pristine SnSe. Elsevier 2014-09 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/37666/1/Film%20electrodes%20deposited%20from%20Cu2SnSe3%20source%20in%20comparison%20with%20those%20deposited%20from%20SnSe%20and%20Cu2ZnSnSe4%20sources%20by%20thermal%20vacuum%20evaporation.pdf Sabli, Nordin and Talib, Zainal Abidin and Mat Yunus, Wan Mahmood and Zainal, Zulkarnain and Hilal, Hikmat S. and Fujii, Masatoshi (2014) Film electrodes deposited from Cu2SnSe3 source in comparison with those deposited from SnSe and Cu2ZnSnSe4 sources by thermal vacuum evaporation: effect of argon gas flow rate. Electrochimica Acta, 139. pp. 238-243. ISSN 0013-4686; ESSN: 1873-3859 http://www.sciencedirect.com/science/article/pii/S0013468614014169#authorabs00151 10.1016/j.electacta.2014.06.167
institution Universiti Putra Malaysia
building UPM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Putra Malaysia
content_source UPM Institutional Repository
url_provider http://psasir.upm.edu.my/
language English
description Addition of argon gas, with different flow rates, to vacuum evaporation deposition of film electrodes from Cu2SnSe3 source, affect nature and properties of the resulting films. While keeping other factors constant, it is possible to control nature and properties of the resulting films simply by controlling the argon gas flow rate. This work shows that films deposited from Cu2SnSe3 under high argon gas flow rate (25 cm3/min) involved SnSe as a major compound, with low concentration of Cu dopant. The film showed higher photoresponse than those deposited from pristine SnSe source. Under lower argon gas flow rates, the resulting films were dominated by the ternary source compound itself, which also showed lower photoresponse than that deposited under higher flow rate. Structure, morphology, chemical composition, optical and photo-electrochemical characteristics have all been studied for films deposited from Cu2SnSe3 under different argon gas flow rates, in parallel with earlier films deposited from SnSe and Cu2ZnSnSe4. The films deposited from Cu2SnSe3 or Cu2ZnSnSe4 under high argon gas flow rate showed a p-type semiconductor behavior with energy gap of about 1.0 eV which confirms the existence of SnSe as a dominant component in each case. A mechanism, which is mainly based on a model of elastic collisions, is proposed to explain the production of SnSe films from the ternary and quaternary sources. On the other hand, the presence of low concentrations of Cu or/and Zn species in the resulting SnSe films is presumably responsible for enhanced photoresponse, as compared to films deposited from pristine SnSe.
format Article
author Sabli, Nordin
Talib, Zainal Abidin
Mat Yunus, Wan Mahmood
Zainal, Zulkarnain
Hilal, Hikmat S.
Fujii, Masatoshi
spellingShingle Sabli, Nordin
Talib, Zainal Abidin
Mat Yunus, Wan Mahmood
Zainal, Zulkarnain
Hilal, Hikmat S.
Fujii, Masatoshi
Film electrodes deposited from Cu2SnSe3 source in comparison with those deposited from SnSe and Cu2ZnSnSe4 sources by thermal vacuum evaporation: effect of argon gas flow rate
author_facet Sabli, Nordin
Talib, Zainal Abidin
Mat Yunus, Wan Mahmood
Zainal, Zulkarnain
Hilal, Hikmat S.
Fujii, Masatoshi
author_sort Sabli, Nordin
title Film electrodes deposited from Cu2SnSe3 source in comparison with those deposited from SnSe and Cu2ZnSnSe4 sources by thermal vacuum evaporation: effect of argon gas flow rate
title_short Film electrodes deposited from Cu2SnSe3 source in comparison with those deposited from SnSe and Cu2ZnSnSe4 sources by thermal vacuum evaporation: effect of argon gas flow rate
title_full Film electrodes deposited from Cu2SnSe3 source in comparison with those deposited from SnSe and Cu2ZnSnSe4 sources by thermal vacuum evaporation: effect of argon gas flow rate
title_fullStr Film electrodes deposited from Cu2SnSe3 source in comparison with those deposited from SnSe and Cu2ZnSnSe4 sources by thermal vacuum evaporation: effect of argon gas flow rate
title_full_unstemmed Film electrodes deposited from Cu2SnSe3 source in comparison with those deposited from SnSe and Cu2ZnSnSe4 sources by thermal vacuum evaporation: effect of argon gas flow rate
title_sort film electrodes deposited from cu2snse3 source in comparison with those deposited from snse and cu2znsnse4 sources by thermal vacuum evaporation: effect of argon gas flow rate
publisher Elsevier
publishDate 2014
url http://psasir.upm.edu.my/id/eprint/37666/1/Film%20electrodes%20deposited%20from%20Cu2SnSe3%20source%20in%20comparison%20with%20those%20deposited%20from%20SnSe%20and%20Cu2ZnSnSe4%20sources%20by%20thermal%20vacuum%20evaporation.pdf
http://psasir.upm.edu.my/id/eprint/37666/
http://www.sciencedirect.com/science/article/pii/S0013468614014169#authorabs00151
_version_ 1643832039207600128
score 13.211869

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