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Effect of high intensity light irradiance on CuInSe2 thin films

CuInSe2 has been a good candidate for photovoltaic material due to its direct band gap and high absorption coefficient. As the stability of photovoltaic are generally dependent on the aggressive environment, i.e. sun light, the CuInSe2 thin film can degrade after long exposure of high intensity ligh...

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Main Authors: Chang, Chung Bin, Talib, Zainal Abidin, Sabli, Nordin
Format: Article
Language:English
Published: Trans Tech Publications 2014
Online Access:http://psasir.upm.edu.my/id/eprint/37259/1/Effect%20of%20high%20intensity%20light%20irradiance%20on%20CuInSe2%20thin%20films.pdf
http://psasir.upm.edu.my/id/eprint/37259/
http://www.scientific.net/AMR.895.51
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spelling my.upm.eprints.372592015-12-01T07:51:21Z http://psasir.upm.edu.my/id/eprint/37259/ Effect of high intensity light irradiance on CuInSe2 thin films Chang, Chung Bin Talib, Zainal Abidin Sabli, Nordin CuInSe2 has been a good candidate for photovoltaic material due to its direct band gap and high absorption coefficient. As the stability of photovoltaic are generally dependent on the aggressive environment, i.e. sun light, the CuInSe2 thin film can degrade after long exposure of high intensity light irradiance. The present study reports on the effect of high intensity light irradiance to the electrical and optical properties of thermal evaporated CuInSe2 thin films. The thin films were exposed to light intensity of 250 W/m2, 500 W/m2, 750 W/m2, 1000 W/m2 and 1500 W/m2 using halogen lamp. We noticed an increasing trend in resistivity after light exposure at all intensities due to the increase of light-induced defects in the films which act as recombination centre for electron-hole pair. Crystallinity of CuInSe2 thin films decreases with increasing intensity of light exposure as a result of light-induce defect. CuInSe2 thin films are found to have higher optical band gap compared to reported 1.01eV due to the amorphous structure of the film and relatively higher surface roughness. Trans Tech Publications 2014 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/37259/1/Effect%20of%20high%20intensity%20light%20irradiance%20on%20CuInSe2%20thin%20films.pdf Chang, Chung Bin and Talib, Zainal Abidin and Sabli, Nordin (2014) Effect of high intensity light irradiance on CuInSe2 thin films. Advanced Materials Research, 895. pp. 51-56. ISSN 1022-6680; ESSN: 1662-8985 http://www.scientific.net/AMR.895.51 10.4028/www.scientific.net/AMR.895.51
institution Universiti Putra Malaysia
building UPM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Putra Malaysia
content_source UPM Institutional Repository
url_provider http://psasir.upm.edu.my/
language English
description CuInSe2 has been a good candidate for photovoltaic material due to its direct band gap and high absorption coefficient. As the stability of photovoltaic are generally dependent on the aggressive environment, i.e. sun light, the CuInSe2 thin film can degrade after long exposure of high intensity light irradiance. The present study reports on the effect of high intensity light irradiance to the electrical and optical properties of thermal evaporated CuInSe2 thin films. The thin films were exposed to light intensity of 250 W/m2, 500 W/m2, 750 W/m2, 1000 W/m2 and 1500 W/m2 using halogen lamp. We noticed an increasing trend in resistivity after light exposure at all intensities due to the increase of light-induced defects in the films which act as recombination centre for electron-hole pair. Crystallinity of CuInSe2 thin films decreases with increasing intensity of light exposure as a result of light-induce defect. CuInSe2 thin films are found to have higher optical band gap compared to reported 1.01eV due to the amorphous structure of the film and relatively higher surface roughness.
format Article
author Chang, Chung Bin
Talib, Zainal Abidin
Sabli, Nordin
spellingShingle Chang, Chung Bin
Talib, Zainal Abidin
Sabli, Nordin
Effect of high intensity light irradiance on CuInSe2 thin films
author_facet Chang, Chung Bin
Talib, Zainal Abidin
Sabli, Nordin
author_sort Chang, Chung Bin
title Effect of high intensity light irradiance on CuInSe2 thin films
title_short Effect of high intensity light irradiance on CuInSe2 thin films
title_full Effect of high intensity light irradiance on CuInSe2 thin films
title_fullStr Effect of high intensity light irradiance on CuInSe2 thin films
title_full_unstemmed Effect of high intensity light irradiance on CuInSe2 thin films
title_sort effect of high intensity light irradiance on cuinse2 thin films
publisher Trans Tech Publications
publishDate 2014
url http://psasir.upm.edu.my/id/eprint/37259/1/Effect%20of%20high%20intensity%20light%20irradiance%20on%20CuInSe2%20thin%20films.pdf
http://psasir.upm.edu.my/id/eprint/37259/
http://www.scientific.net/AMR.895.51
_version_ 1643831945717612544
score 13.2400255

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