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Effect of geometric parameters on the performance of p-type junctionless lateral gate transistors

This paper examines the impact of two important geometrical parameters, namely the thickness and source/drain extensions on the performance of low doped p-type double lateral gate junctionless transistors (DGJLTs). The three dimensional Technology Computer-Aided Design simulation is implemented to c...

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Main Authors: Larki, Farhad, Dehzangi, Arash, Md. Ali, Sawal Hamid, Jalar @ Jalil, Azman, Islam, Md. Shabiul, Hamidon, Mohd Nizar, Yeop Majlis, Burhanuddin
Format: Article
Language:English
Published: Public Library of Science 2014
Online Access:http://psasir.upm.edu.my/id/eprint/37251/1/Effect%20of%20geometric%20parameters%20on%20the%20performance%20of%20p.pdf
http://psasir.upm.edu.my/id/eprint/37251/
http://journals.plos.org/plosone/article?id=10.1371/journal.pone.0095182
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spelling my.upm.eprints.372512017-06-06T05:00:55Z http://psasir.upm.edu.my/id/eprint/37251/ Effect of geometric parameters on the performance of p-type junctionless lateral gate transistors Larki, Farhad Dehzangi, Arash Md. Ali, Sawal Hamid Jalar @ Jalil, Azman Islam, Md. Shabiul Hamidon, Mohd Nizar Yeop Majlis, Burhanuddin This paper examines the impact of two important geometrical parameters, namely the thickness and source/drain extensions on the performance of low doped p-type double lateral gate junctionless transistors (DGJLTs). The three dimensional Technology Computer-Aided Design simulation is implemented to calculate the characteristics of the devices with different thickness and source/drain extension and based on that, the parameters such as threshold voltage, transconductance and resistance in saturation region are analyzed. In addition, simulation results provide a physical explanation for the variation of device characteristics given by the variation of geometric parameters, mainly based on investigation of the electric field components and the carries density variation. It is shown that, the variation of the carrier density is the main factor which affects the characteristics of the device when the device's thickness is varied. However, the electric field is mainly responsible for variation of the characteristics when the source/drain extension is changed. Public Library of Science 2014-04 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/37251/1/Effect%20of%20geometric%20parameters%20on%20the%20performance%20of%20p.pdf Larki, Farhad and Dehzangi, Arash and Md. Ali, Sawal Hamid and Jalar @ Jalil, Azman and Islam, Md. Shabiul and Hamidon, Mohd Nizar and Yeop Majlis, Burhanuddin (2014) Effect of geometric parameters on the performance of p-type junctionless lateral gate transistors. PLOS ONE, 9 (4). art. no. e95182. pp. 1-9. ISSN 1932-6203 http://journals.plos.org/plosone/article?id=10.1371/journal.pone.0095182 10.1371/journal.pone.0095182
institution Universiti Putra Malaysia
building UPM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Putra Malaysia
content_source UPM Institutional Repository
url_provider http://psasir.upm.edu.my/
language English
description This paper examines the impact of two important geometrical parameters, namely the thickness and source/drain extensions on the performance of low doped p-type double lateral gate junctionless transistors (DGJLTs). The three dimensional Technology Computer-Aided Design simulation is implemented to calculate the characteristics of the devices with different thickness and source/drain extension and based on that, the parameters such as threshold voltage, transconductance and resistance in saturation region are analyzed. In addition, simulation results provide a physical explanation for the variation of device characteristics given by the variation of geometric parameters, mainly based on investigation of the electric field components and the carries density variation. It is shown that, the variation of the carrier density is the main factor which affects the characteristics of the device when the device's thickness is varied. However, the electric field is mainly responsible for variation of the characteristics when the source/drain extension is changed.
format Article
author Larki, Farhad
Dehzangi, Arash
Md. Ali, Sawal Hamid
Jalar @ Jalil, Azman
Islam, Md. Shabiul
Hamidon, Mohd Nizar
Yeop Majlis, Burhanuddin
spellingShingle Larki, Farhad
Dehzangi, Arash
Md. Ali, Sawal Hamid
Jalar @ Jalil, Azman
Islam, Md. Shabiul
Hamidon, Mohd Nizar
Yeop Majlis, Burhanuddin
Effect of geometric parameters on the performance of p-type junctionless lateral gate transistors
author_facet Larki, Farhad
Dehzangi, Arash
Md. Ali, Sawal Hamid
Jalar @ Jalil, Azman
Islam, Md. Shabiul
Hamidon, Mohd Nizar
Yeop Majlis, Burhanuddin
author_sort Larki, Farhad
title Effect of geometric parameters on the performance of p-type junctionless lateral gate transistors
title_short Effect of geometric parameters on the performance of p-type junctionless lateral gate transistors
title_full Effect of geometric parameters on the performance of p-type junctionless lateral gate transistors
title_fullStr Effect of geometric parameters on the performance of p-type junctionless lateral gate transistors
title_full_unstemmed Effect of geometric parameters on the performance of p-type junctionless lateral gate transistors
title_sort effect of geometric parameters on the performance of p-type junctionless lateral gate transistors
publisher Public Library of Science
publishDate 2014
url http://psasir.upm.edu.my/id/eprint/37251/1/Effect%20of%20geometric%20parameters%20on%20the%20performance%20of%20p.pdf
http://psasir.upm.edu.my/id/eprint/37251/
http://journals.plos.org/plosone/article?id=10.1371/journal.pone.0095182
_version_ 1643831943640383488
score 13.211869

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