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Quantitative estimates of the variations of refractive index and gain with carrier density in GaAs/GaAIAs semiconductor injection lasers

Quantitative estimates are made of the varia- tions of real refractive index (n ') and gain (g) with carrier density (N) in the GaAs/GaA1As d. h. laser with active-layer p-doping to 4 x 1017 cm-3 and operating at 297K. It is found that the value of Isn' should lie anywhere between -0.01 an...

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Main Author: Poh, B. S.
Format: Article
Language:English
Published: Institusi Jurutera Malaysia 1984
Online Access:http://psasir.upm.edu.my/id/eprint/34117/1/8.%2034117.pdf
http://psasir.upm.edu.my/id/eprint/34117/
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spelling my.upm.eprints.341172015-05-21T06:24:38Z http://psasir.upm.edu.my/id/eprint/34117/ Quantitative estimates of the variations of refractive index and gain with carrier density in GaAs/GaAIAs semiconductor injection lasers Poh, B. S. Quantitative estimates are made of the varia- tions of real refractive index (n ') and gain (g) with carrier density (N) in the GaAs/GaA1As d. h. laser with active-layer p-doping to 4 x 1017 cm-3 and operating at 297K. It is found that the value of Isn' should lie anywhere between -0.01 and -0.05, and the value of On 'faN should lie between -1.0 x 1(J20 cm~ . The value of a in the gain relation, g = a In(N), should lie between 100 cm-1 and 600 cm-1. A pro- portionality constant, A, is defined for the variation of }l with N, }l being the ratio of the real refractive index variation to the variation of the imaginary part of the complex refractive index. Graphs of A as a function of a are plotted, from which a value of a may be chosen together with the corresponding value of A. Institusi Jurutera Malaysia 1984 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/34117/1/8.%2034117.pdf Poh, B. S. (1984) Quantitative estimates of the variations of refractive index and gain with carrier density in GaAs/GaAIAs semiconductor injection lasers. Jurnal Institusi Jurutera Malaysia, 35. pp. 64-71. ISSN 0126-513X
institution Universiti Putra Malaysia
building UPM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Putra Malaysia
content_source UPM Institutional Repository
url_provider http://psasir.upm.edu.my/
language English
description Quantitative estimates are made of the varia- tions of real refractive index (n ') and gain (g) with carrier density (N) in the GaAs/GaA1As d. h. laser with active-layer p-doping to 4 x 1017 cm-3 and operating at 297K. It is found that the value of Isn' should lie anywhere between -0.01 and -0.05, and the value of On 'faN should lie between -1.0 x 1(J20 cm~ . The value of a in the gain relation, g = a In(N), should lie between 100 cm-1 and 600 cm-1. A pro- portionality constant, A, is defined for the variation of }l with N, }l being the ratio of the real refractive index variation to the variation of the imaginary part of the complex refractive index. Graphs of A as a function of a are plotted, from which a value of a may be chosen together with the corresponding value of A.
format Article
author Poh, B. S.
spellingShingle Poh, B. S.
Quantitative estimates of the variations of refractive index and gain with carrier density in GaAs/GaAIAs semiconductor injection lasers
author_facet Poh, B. S.
author_sort Poh, B. S.
title Quantitative estimates of the variations of refractive index and gain with carrier density in GaAs/GaAIAs semiconductor injection lasers
title_short Quantitative estimates of the variations of refractive index and gain with carrier density in GaAs/GaAIAs semiconductor injection lasers
title_full Quantitative estimates of the variations of refractive index and gain with carrier density in GaAs/GaAIAs semiconductor injection lasers
title_fullStr Quantitative estimates of the variations of refractive index and gain with carrier density in GaAs/GaAIAs semiconductor injection lasers
title_full_unstemmed Quantitative estimates of the variations of refractive index and gain with carrier density in GaAs/GaAIAs semiconductor injection lasers
title_sort quantitative estimates of the variations of refractive index and gain with carrier density in gaas/gaaias semiconductor injection lasers
publisher Institusi Jurutera Malaysia
publishDate 1984
url http://psasir.upm.edu.my/id/eprint/34117/1/8.%2034117.pdf
http://psasir.upm.edu.my/id/eprint/34117/
_version_ 1643831058375901184
score 13.211869

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