Optimizing C incorporation into magnesium diboride.
In this work, either SiC or separate Si and C (Si+C) powders of up to 10 weight percentage were in situ reacted with Mg and B (molar ratio of 1:2) and the superconducting properties compared. The latter shows a smaller a-axis lattice cell parameter as compared to the same level of SiC additions, ind...
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Institute of Electrical and Electronics Engineers
2011
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my.upm.eprints.246362013-09-19T03:39:59Z http://psasir.upm.edu.my/id/eprint/24636/ Optimizing C incorporation into magnesium diboride. Soo, Kien Chen Kwee, Y. Tan Kar, Ban Tan Shaari, Abdul Halim Kursumovic, Ahmed MacManus-Driscoll, Judith L. In this work, either SiC or separate Si and C (Si+C) powders of up to 10 weight percentage were in situ reacted with Mg and B (molar ratio of 1:2) and the superconducting properties compared. The latter shows a smaller a-axis lattice cell parameter as compared to the same level of SiC additions, indicating a higher level of C substitution. In those samples, a larger increase in the C-axis is also noticeable and a more severe degradation in the superconducting transition temperature is observed. However, reaction with SiC causes a greater broadening in the transition width. At both 5Kand 20 K, for samples reacted with SiC (up to 5 wt.%) a stronger improvement in the magnitude of critical current density, J c, is obtained. On the other hand, samples reacted with (Si+C) show a weaker dependence on field at 5 K because of higher C substitution. At 20 K, the decreases more rapidly with field for the same level of SiC additions. Hence, for high temperature (20 K) and lowfield (<5 T) applications, reaction with SiC is preferred for obtaining higher J c (H). Institute of Electrical and Electronics Engineers 2011 Article PeerReviewed Soo, Kien Chen and Kwee, Y. Tan and Kar, Ban Tan and Shaari, Abdul Halim and Kursumovic, Ahmed and MacManus-Driscoll, Judith L. (2011) Optimizing C incorporation into magnesium diboride. IEEE Transactions on Applied Superconductivity, 21 (3). pp. 2627-2630. ISSN 1051-8223 http://www.ieee.org/ 10.1109/TASC.2010.2089420 English |
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In this work, either SiC or separate Si and C (Si+C) powders of up to 10 weight percentage were in situ reacted with Mg and B (molar ratio of 1:2) and the superconducting properties compared. The latter shows a smaller a-axis lattice cell parameter as compared to the same level of SiC additions, indicating a higher level of C substitution. In those samples, a larger increase in the C-axis is also noticeable and a more severe degradation in the superconducting transition temperature is observed. However, reaction with SiC causes a greater broadening in the transition width. At both 5Kand 20 K, for samples reacted with SiC (up to 5 wt.%) a stronger improvement in the magnitude of critical current density, J c, is obtained. On the other hand, samples reacted with (Si+C) show a weaker dependence on field at 5 K because of higher C substitution. At 20 K, the decreases more rapidly with field for the same level of SiC additions. Hence, for high temperature (20 K) and lowfield (<5 T) applications, reaction with SiC is preferred for obtaining higher J c (H). |
format |
Article |
author |
Soo, Kien Chen Kwee, Y. Tan Kar, Ban Tan Shaari, Abdul Halim Kursumovic, Ahmed MacManus-Driscoll, Judith L. |
spellingShingle |
Soo, Kien Chen Kwee, Y. Tan Kar, Ban Tan Shaari, Abdul Halim Kursumovic, Ahmed MacManus-Driscoll, Judith L. Optimizing C incorporation into magnesium diboride. |
author_facet |
Soo, Kien Chen Kwee, Y. Tan Kar, Ban Tan Shaari, Abdul Halim Kursumovic, Ahmed MacManus-Driscoll, Judith L. |
author_sort |
Soo, Kien Chen |
title |
Optimizing C incorporation into magnesium diboride. |
title_short |
Optimizing C incorporation into magnesium diboride. |
title_full |
Optimizing C incorporation into magnesium diboride. |
title_fullStr |
Optimizing C incorporation into magnesium diboride. |
title_full_unstemmed |
Optimizing C incorporation into magnesium diboride. |
title_sort |
optimizing c incorporation into magnesium diboride. |
publisher |
Institute of Electrical and Electronics Engineers |
publishDate |
2011 |
url |
http://psasir.upm.edu.my/id/eprint/24636/ http://www.ieee.org/ |
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1643828420620058624 |
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13.211869 |