Two-photon excited luminescence spectral distribution observation in wide-gap semiconductor crystals.
The use of photoluminescence excited with two-photon process for characterizing the defect and impurity level in wide-gap semiconductor is discussed in this paper. Defects of polycrystalline zinc selenide (ZnSe) is observed deep inside the crystal. Two types of defects can be detected based on the s...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English English |
| Published: |
American Institute of Physics Inc.
2008
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| Online Access: | http://psasir.upm.edu.my/id/eprint/17504/1/Two.pdf http://psasir.upm.edu.my/id/eprint/17504/ |
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