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Non-linearity in wide dynamic range CMOS image sensors utilizing a partial charge transfer technique

The partial charge transfer technique can expand the dynamic range of a CMOS image sensor by synthesizing two types of signal, namely the long and short accumulation time signals. However the short accumulation time signal obtained from partial transfer operation suffers of non-linearity with respec...

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Main Authors: Shafie, Suhaidi, Kawahito, Shoji, Abdul Halin, Izhal, Wan Hassan, Wan Zuha
Format: Article
Language:English
Published: Multidisciplinary Digital Publishing Institute 2009
Online Access:http://psasir.upm.edu.my/id/eprint/15828/
http://www.mdpi.com/1424-8220/9/12/9452
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spelling my.upm.eprints.158282014-12-25T09:39:46Z http://psasir.upm.edu.my/id/eprint/15828/ Non-linearity in wide dynamic range CMOS image sensors utilizing a partial charge transfer technique Shafie, Suhaidi Kawahito, Shoji Abdul Halin, Izhal Wan Hassan, Wan Zuha The partial charge transfer technique can expand the dynamic range of a CMOS image sensor by synthesizing two types of signal, namely the long and short accumulation time signals. However the short accumulation time signal obtained from partial transfer operation suffers of non-linearity with respect to the incident light. In this paper, an analysis of the non-linearity in partial charge transfer technique has been carried, and the relationship between dynamic range and the non-linearity is studied. The results show that the non-linearity is caused by two factors, namely the current diffusion, which has an exponential relation with the potential barrier, and the initial condition of photodiodes in which it shows that the error in the high illumination region increases as the ratio of the long to the short accumulation time raises. Moreover, the increment of the saturation level of photodiodes also increases the error in the high illumination region. Multidisciplinary Digital Publishing Institute 2009-11-26 Article PeerReviewed Shafie, Suhaidi and Kawahito, Shoji and Abdul Halin, Izhal and Wan Hassan, Wan Zuha (2009) Non-linearity in wide dynamic range CMOS image sensors utilizing a partial charge transfer technique. Sensors, 9 (12). pp. 9452-9467. ISSN 1424-8220 http://www.mdpi.com/1424-8220/9/12/9452 10.3390/s91209452 English
institution Universiti Putra Malaysia
building UPM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Putra Malaysia
content_source UPM Institutional Repository
url_provider http://psasir.upm.edu.my/
language English
description The partial charge transfer technique can expand the dynamic range of a CMOS image sensor by synthesizing two types of signal, namely the long and short accumulation time signals. However the short accumulation time signal obtained from partial transfer operation suffers of non-linearity with respect to the incident light. In this paper, an analysis of the non-linearity in partial charge transfer technique has been carried, and the relationship between dynamic range and the non-linearity is studied. The results show that the non-linearity is caused by two factors, namely the current diffusion, which has an exponential relation with the potential barrier, and the initial condition of photodiodes in which it shows that the error in the high illumination region increases as the ratio of the long to the short accumulation time raises. Moreover, the increment of the saturation level of photodiodes also increases the error in the high illumination region.
format Article
author Shafie, Suhaidi
Kawahito, Shoji
Abdul Halin, Izhal
Wan Hassan, Wan Zuha
spellingShingle Shafie, Suhaidi
Kawahito, Shoji
Abdul Halin, Izhal
Wan Hassan, Wan Zuha
Non-linearity in wide dynamic range CMOS image sensors utilizing a partial charge transfer technique
author_facet Shafie, Suhaidi
Kawahito, Shoji
Abdul Halin, Izhal
Wan Hassan, Wan Zuha
author_sort Shafie, Suhaidi
title Non-linearity in wide dynamic range CMOS image sensors utilizing a partial charge transfer technique
title_short Non-linearity in wide dynamic range CMOS image sensors utilizing a partial charge transfer technique
title_full Non-linearity in wide dynamic range CMOS image sensors utilizing a partial charge transfer technique
title_fullStr Non-linearity in wide dynamic range CMOS image sensors utilizing a partial charge transfer technique
title_full_unstemmed Non-linearity in wide dynamic range CMOS image sensors utilizing a partial charge transfer technique
title_sort non-linearity in wide dynamic range cmos image sensors utilizing a partial charge transfer technique
publisher Multidisciplinary Digital Publishing Institute
publishDate 2009
url http://psasir.upm.edu.my/id/eprint/15828/
http://www.mdpi.com/1424-8220/9/12/9452
_version_ 1643826041507020800
score 13.211869

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