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Effects of electrolytes concentration on the chemically deposited Cu4SnS4 thin films

Cu4SnS4 thin films have been deposited on indium tin oxide glass substrates from aqueous acidic bath using chemical bath deposition. The disodium ethylenediaminetetraacetic acid was used as a complexing agent. Deposition at different concentrations was attempted in order to study the effect of elect...

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Main Authors: Kassim, Anuar, Tan, Wee Tee, Mohd Sharif, Atan, Abdullah, Dzulkefly Kuang, Haron, Md. Jelas, Ho, Soon Min, Nagalingam, Saravanan
Format: Article
Language:English
Published: Asian Publication Corporation 2010
Online Access:http://psasir.upm.edu.my/id/eprint/14368/1/Effects%20of%20electrolytes%20concentration%20on%20the%20chemically%20deposited%20Cu4SnS4%20thin%20films.pdf
http://psasir.upm.edu.my/id/eprint/14368/
http://www.asianjournalofchemistry.co.in/user/journal/viewarticle.aspx?ArticleID=22_1_32
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spelling my.upm.eprints.143682019-04-08T08:34:15Z http://psasir.upm.edu.my/id/eprint/14368/ Effects of electrolytes concentration on the chemically deposited Cu4SnS4 thin films Kassim, Anuar Tan, Wee Tee Mohd Sharif, Atan Abdullah, Dzulkefly Kuang Haron, Md. Jelas Ho, Soon Min Nagalingam, Saravanan Cu4SnS4 thin films have been deposited on indium tin oxide glass substrates from aqueous acidic bath using chemical bath deposition. The disodium ethylenediaminetetraacetic acid was used as a complexing agent. Deposition at different concentrations was attempted in order to study the effect of electrolytes concentration on the film properties and to get good quality photosensitive materials. The structure and surface morphology of films were studied by X-ray diffraction and atomic force microscopy. The optical properties were measured to determine transition type and band gap value. The X-ray diffraction analysis showed the presence of polycrystalline in nature. Also, the films exhibited orthorhombic structure with a sharp (221) plane. The films prepared using higher concentration showed better photosensitivity compared with lower concentration. The AFM images of these films showed the surface of substrate was covered completely. Optical absorption shows the presence of direct transition with band gap energy of 1.7 eV. Asian Publication Corporation 2010 Article PeerReviewed text en http://psasir.upm.edu.my/id/eprint/14368/1/Effects%20of%20electrolytes%20concentration%20on%20the%20chemically%20deposited%20Cu4SnS4%20thin%20films.pdf Kassim, Anuar and Tan, Wee Tee and Mohd Sharif, Atan and Abdullah, Dzulkefly Kuang and Haron, Md. Jelas and Ho, Soon Min and Nagalingam, Saravanan (2010) Effects of electrolytes concentration on the chemically deposited Cu4SnS4 thin films. Asian Journal of Chemistry, 22 (1). pp. 222-232. ISSN 0970-7077; ESSN: 0975-427X http://www.asianjournalofchemistry.co.in/user/journal/viewarticle.aspx?ArticleID=22_1_32
institution Universiti Putra Malaysia
building UPM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Putra Malaysia
content_source UPM Institutional Repository
url_provider http://psasir.upm.edu.my/
language English
description Cu4SnS4 thin films have been deposited on indium tin oxide glass substrates from aqueous acidic bath using chemical bath deposition. The disodium ethylenediaminetetraacetic acid was used as a complexing agent. Deposition at different concentrations was attempted in order to study the effect of electrolytes concentration on the film properties and to get good quality photosensitive materials. The structure and surface morphology of films were studied by X-ray diffraction and atomic force microscopy. The optical properties were measured to determine transition type and band gap value. The X-ray diffraction analysis showed the presence of polycrystalline in nature. Also, the films exhibited orthorhombic structure with a sharp (221) plane. The films prepared using higher concentration showed better photosensitivity compared with lower concentration. The AFM images of these films showed the surface of substrate was covered completely. Optical absorption shows the presence of direct transition with band gap energy of 1.7 eV.
format Article
author Kassim, Anuar
Tan, Wee Tee
Mohd Sharif, Atan
Abdullah, Dzulkefly Kuang
Haron, Md. Jelas
Ho, Soon Min
Nagalingam, Saravanan
spellingShingle Kassim, Anuar
Tan, Wee Tee
Mohd Sharif, Atan
Abdullah, Dzulkefly Kuang
Haron, Md. Jelas
Ho, Soon Min
Nagalingam, Saravanan
Effects of electrolytes concentration on the chemically deposited Cu4SnS4 thin films
author_facet Kassim, Anuar
Tan, Wee Tee
Mohd Sharif, Atan
Abdullah, Dzulkefly Kuang
Haron, Md. Jelas
Ho, Soon Min
Nagalingam, Saravanan
author_sort Kassim, Anuar
title Effects of electrolytes concentration on the chemically deposited Cu4SnS4 thin films
title_short Effects of electrolytes concentration on the chemically deposited Cu4SnS4 thin films
title_full Effects of electrolytes concentration on the chemically deposited Cu4SnS4 thin films
title_fullStr Effects of electrolytes concentration on the chemically deposited Cu4SnS4 thin films
title_full_unstemmed Effects of electrolytes concentration on the chemically deposited Cu4SnS4 thin films
title_sort effects of electrolytes concentration on the chemically deposited cu4sns4 thin films
publisher Asian Publication Corporation
publishDate 2010
url http://psasir.upm.edu.my/id/eprint/14368/1/Effects%20of%20electrolytes%20concentration%20on%20the%20chemically%20deposited%20Cu4SnS4%20thin%20films.pdf
http://psasir.upm.edu.my/id/eprint/14368/
http://www.asianjournalofchemistry.co.in/user/journal/viewarticle.aspx?ArticleID=22_1_32
_version_ 1643825610849517568
score 13.211869

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