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The resistance switching performance of the memristor improved effectively by inserting carbon quantum dots (CQDs) for digital information processing

As an emerging information device that adapts to development of the big data era, memristor has attracted much attention due to its advantage in processing massive data. However, the nucleation and growth of conductive filaments often exhibit randomness and instability, which undoubtedly leads to a...

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Main Authors: Yu, Tianqi, Li, Jie, Lei, Wei, Shafe, Suhaidi, Mohtar, Mohd Nazim, Jindapetch, Nattha, Dommelen, Paphavee van, Zhao, Zhiwei
Format: Article
Published: Tsinghua University Press 2024
Online Access:http://psasir.upm.edu.my/id/eprint/115139/
https://link.springer.com/article/10.1007/s12274-024-6801-4?error=cookies_not_supported&code=51cea00f-980a-4479-8cf6-5ee761949df8
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spelling my.upm.eprints.1151392025-02-24T03:37:45Z http://psasir.upm.edu.my/id/eprint/115139/ The resistance switching performance of the memristor improved effectively by inserting carbon quantum dots (CQDs) for digital information processing Yu, Tianqi Li, Jie Lei, Wei Shafe, Suhaidi Mohtar, Mohd Nazim Jindapetch, Nattha Dommelen, Paphavee van Zhao, Zhiwei As an emerging information device that adapts to development of the big data era, memristor has attracted much attention due to its advantage in processing massive data. However, the nucleation and growth of conductive filaments often exhibit randomness and instability, which undoubtedly leads to a wide and discrete range of switching parameters, damaging the electrical performance of device. In this work, a strategy of inserting carbon quantum dots (CQDs) into graphene oxide (GO) resistance layer is utilized to improve the stability of the switching parameters and the reliability of the device is improved. Compared with GO-based devices, GO/CQDs/GO-based devices exhibit a more stable resistance switching curve, low power, lower and more concentrated threshold voltage parameters with lower variation coefficient, faster switching speed, and more stable retention and endurance. The cause-inducing performance improvement may be attributed to the local electric field generated by CQDs in resistance switching that effectively guides the formation and rupture of conductive filaments, which optimizes the effective migration distance of Ag+, thereby improving the uniformity of resistance switching. Additionally, a convolutional neural network model is constructed to identify the CIFAR-10 data set, showing the high recognition accuracy of online and offline learning. The cross-kernel structure is used to further implement convolutional image processing through multiplication and accumulation operations. This work provides a solution to improve the performance of memristors, which can contribute to developing digital information processing. Tsinghua University Press 2024-07-13 Article PeerReviewed Yu, Tianqi and Li, Jie and Lei, Wei and Shafe, Suhaidi and Mohtar, Mohd Nazim and Jindapetch, Nattha and Dommelen, Paphavee van and Zhao, Zhiwei (2024) The resistance switching performance of the memristor improved effectively by inserting carbon quantum dots (CQDs) for digital information processing. Nano Research, 17 (9). pp. 8438-8446. ISSN 1998-0124; eISSN: 1998-0000 https://link.springer.com/article/10.1007/s12274-024-6801-4?error=cookies_not_supported&code=51cea00f-980a-4479-8cf6-5ee761949df8 10.1007/s12274-024-6801-4
institution Universiti Putra Malaysia
building UPM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Putra Malaysia
content_source UPM Institutional Repository
url_provider http://psasir.upm.edu.my/
description As an emerging information device that adapts to development of the big data era, memristor has attracted much attention due to its advantage in processing massive data. However, the nucleation and growth of conductive filaments often exhibit randomness and instability, which undoubtedly leads to a wide and discrete range of switching parameters, damaging the electrical performance of device. In this work, a strategy of inserting carbon quantum dots (CQDs) into graphene oxide (GO) resistance layer is utilized to improve the stability of the switching parameters and the reliability of the device is improved. Compared with GO-based devices, GO/CQDs/GO-based devices exhibit a more stable resistance switching curve, low power, lower and more concentrated threshold voltage parameters with lower variation coefficient, faster switching speed, and more stable retention and endurance. The cause-inducing performance improvement may be attributed to the local electric field generated by CQDs in resistance switching that effectively guides the formation and rupture of conductive filaments, which optimizes the effective migration distance of Ag+, thereby improving the uniformity of resistance switching. Additionally, a convolutional neural network model is constructed to identify the CIFAR-10 data set, showing the high recognition accuracy of online and offline learning. The cross-kernel structure is used to further implement convolutional image processing through multiplication and accumulation operations. This work provides a solution to improve the performance of memristors, which can contribute to developing digital information processing.
format Article
author Yu, Tianqi
Li, Jie
Lei, Wei
Shafe, Suhaidi
Mohtar, Mohd Nazim
Jindapetch, Nattha
Dommelen, Paphavee van
Zhao, Zhiwei
spellingShingle Yu, Tianqi
Li, Jie
Lei, Wei
Shafe, Suhaidi
Mohtar, Mohd Nazim
Jindapetch, Nattha
Dommelen, Paphavee van
Zhao, Zhiwei
The resistance switching performance of the memristor improved effectively by inserting carbon quantum dots (CQDs) for digital information processing
author_facet Yu, Tianqi
Li, Jie
Lei, Wei
Shafe, Suhaidi
Mohtar, Mohd Nazim
Jindapetch, Nattha
Dommelen, Paphavee van
Zhao, Zhiwei
author_sort Yu, Tianqi
title The resistance switching performance of the memristor improved effectively by inserting carbon quantum dots (CQDs) for digital information processing
title_short The resistance switching performance of the memristor improved effectively by inserting carbon quantum dots (CQDs) for digital information processing
title_full The resistance switching performance of the memristor improved effectively by inserting carbon quantum dots (CQDs) for digital information processing
title_fullStr The resistance switching performance of the memristor improved effectively by inserting carbon quantum dots (CQDs) for digital information processing
title_full_unstemmed The resistance switching performance of the memristor improved effectively by inserting carbon quantum dots (CQDs) for digital information processing
title_sort resistance switching performance of the memristor improved effectively by inserting carbon quantum dots (cqds) for digital information processing
publisher Tsinghua University Press
publishDate 2024
url http://psasir.upm.edu.my/id/eprint/115139/
https://link.springer.com/article/10.1007/s12274-024-6801-4?error=cookies_not_supported&code=51cea00f-980a-4479-8cf6-5ee761949df8
_version_ 1825162439517274112
score 13.239859

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