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Mote2-based low energy consumption artificial synapse for neuromorphic behavior and decimal arithmetic

Two-dimensional material-based memristors have shown attractive research prospects as brain-like devices for neuromorphic computing. Among them, transition metal dichalcogenides–based memristors have proved to be one of the most promising competitors. In this work, a two-dimensional memristor based...

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主要な著者: Yu, T., Zhao, Z., Jiang, H., Weng, Z., Fang, Y., Yu, Y., Lei, W., Shafe, S. B., Mohtar, M. N.
フォーマット: 論文
言語:English
出版事項: Elsevier 2023
オンライン･アクセス:http://psasir.upm.edu.my/id/eprint/108904/1/MoTe2-based%20low%20energy.pdf
http://psasir.upm.edu.my/id/eprint/108904/
https://linkinghub.elsevier.com/retrieve/pii/S2468519422004979
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spelling my.upm.eprints.1089042024-10-10T07:38:17Z http://psasir.upm.edu.my/id/eprint/108904/ Mote2-based low energy consumption artificial synapse for neuromorphic behavior and decimal arithmetic Yu, T. Zhao, Z. Jiang, H. Weng, Z. Fang, Y. Yu, Y. Lei, W. Shafe, S. B. Mohtar, M. N. Two-dimensional material-based memristors have shown attractive research prospects as brain-like devices for neuromorphic computing. Among them, transition metal dichalcogenides–based memristors have proved to be one of the most promising competitors. In this work, a two-dimensional memristor based on MoTe2 nanosheets was fabricated and demonstrated. The experimental results illustrate that the two-terminal synaptic based on the Ag/MoTe2/ITO structure exhibits stable bipolar and non-volatile resistive switching characteristics attributed to the controllable formation and rupturing of silver conductive filaments. The device can be successively modulated by a pulse train with a minimum pulse width of 40 ns. More interestingly, the energy consumption of the device to complete one write event is only 74.2 pJ. In addition, biological synaptic behaviors, such as excitatory postsynaptic current gain properties, long-term potentiation (LTP)/long-term depression, spike-timing-dependent- plasticity, short-term plasticity, long-term potentiation (LTP), paired-pulse facilitation, post-tetanic potentiation, and learning-experimental behaviors were mimicked faithfully. Finally, the decimal arithmetic application was introduced to the device, and it is confirmed that addition and multiplication functions can be performed. Therefore, the artificial synapse based on MoTe2 nanosheets not only exhibits the stable non-volatile resistive switching behavior but also facilitates the development of low-energy consumption neuromorphic computing chips based on transition metal dichalcogenides. Elsevier 2023 Article PeerReviewed text en http://psasir.upm.edu.my/id/eprint/108904/1/MoTe2-based%20low%20energy.pdf Yu, T. and Zhao, Z. and Jiang, H. and Weng, Z. and Fang, Y. and Yu, Y. and Lei, W. and Shafe, S. B. and Mohtar, M. N. (2023) Mote2-based low energy consumption artificial synapse for neuromorphic behavior and decimal arithmetic. Materials Today Chemistry, 27. art. no. 101268. pp. 1-10. ISSN 2468-5194 https://linkinghub.elsevier.com/retrieve/pii/S2468519422004979 10.1016/j.mtchem.2022.101268
institution Universiti Putra Malaysia
building UPM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Putra Malaysia
content_source UPM Institutional Repository
url_provider http://psasir.upm.edu.my/
language English
description Two-dimensional material-based memristors have shown attractive research prospects as brain-like devices for neuromorphic computing. Among them, transition metal dichalcogenides–based memristors have proved to be one of the most promising competitors. In this work, a two-dimensional memristor based on MoTe2 nanosheets was fabricated and demonstrated. The experimental results illustrate that the two-terminal synaptic based on the Ag/MoTe2/ITO structure exhibits stable bipolar and non-volatile resistive switching characteristics attributed to the controllable formation and rupturing of silver conductive filaments. The device can be successively modulated by a pulse train with a minimum pulse width of 40 ns. More interestingly, the energy consumption of the device to complete one write event is only 74.2 pJ. In addition, biological synaptic behaviors, such as excitatory postsynaptic current gain properties, long-term potentiation (LTP)/long-term depression, spike-timing-dependent- plasticity, short-term plasticity, long-term potentiation (LTP), paired-pulse facilitation, post-tetanic potentiation, and learning-experimental behaviors were mimicked faithfully. Finally, the decimal arithmetic application was introduced to the device, and it is confirmed that addition and multiplication functions can be performed. Therefore, the artificial synapse based on MoTe2 nanosheets not only exhibits the stable non-volatile resistive switching behavior but also facilitates the development of low-energy consumption neuromorphic computing chips based on transition metal dichalcogenides.
format Article
author Yu, T.
Zhao, Z.
Jiang, H.
Weng, Z.
Fang, Y.
Yu, Y.
Lei, W.
Shafe, S. B.
Mohtar, M. N.
spellingShingle Yu, T.
Zhao, Z.
Jiang, H.
Weng, Z.
Fang, Y.
Yu, Y.
Lei, W.
Shafe, S. B.
Mohtar, M. N.
Mote2-based low energy consumption artificial synapse for neuromorphic behavior and decimal arithmetic
author_facet Yu, T.
Zhao, Z.
Jiang, H.
Weng, Z.
Fang, Y.
Yu, Y.
Lei, W.
Shafe, S. B.
Mohtar, M. N.
author_sort Yu, T.
title Mote2-based low energy consumption artificial synapse for neuromorphic behavior and decimal arithmetic
title_short Mote2-based low energy consumption artificial synapse for neuromorphic behavior and decimal arithmetic
title_full Mote2-based low energy consumption artificial synapse for neuromorphic behavior and decimal arithmetic
title_fullStr Mote2-based low energy consumption artificial synapse for neuromorphic behavior and decimal arithmetic
title_full_unstemmed Mote2-based low energy consumption artificial synapse for neuromorphic behavior and decimal arithmetic
title_sort mote2-based low energy consumption artificial synapse for neuromorphic behavior and decimal arithmetic
publisher Elsevier
publishDate 2023
url http://psasir.upm.edu.my/id/eprint/108904/1/MoTe2-based%20low%20energy.pdf
http://psasir.upm.edu.my/id/eprint/108904/
https://linkinghub.elsevier.com/retrieve/pii/S2468519422004979
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score 13.251813

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