Optimisation of N-channel trench power MOSFET using 2 k factorial design method
The main objective of this research is to optimize the trench depth, trench width, epitaxial resistivity and epitaxial thickness in trench power MOSFET so as to obtain high breakdown voltage but low on-resistance. Optimisation of these parameters are based on 2 k factorial design method for achievin...
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2017
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| 在線閱讀: | http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5257 |
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