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High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well

Silicon-on-insulator (SOI) based SiGe quantum well infrared pin photodiode has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. The present work investigates the performance of a virtual lateral PIN photodiode with a SiGe...

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Main Authors: Menon, P.S., Tasirin, S.K., Ahmad, I., Abdullah, S.F.
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Published: 2017
Online Access:http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5223
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spelling my.uniten.dspace-52232017-11-15T02:56:46Z High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well Menon, P.S. Tasirin, S.K. Ahmad, I. Abdullah, S.F. Silicon-on-insulator (SOI) based SiGe quantum well infrared pin photodiode has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. The present work investigates the performance of a virtual lateral PIN photodiode with a SiGe/Si multi-quantum well structure. In this paper, 5 periods of stacked SiGe quantum wells were grown on Si(100). A lateral PIN photodiode consisting of the SiGe/Si multi-quantum well layers as the active absorption layer with intensity response in the 700-1600 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.89 A/W, 71% and 21 GHz respectively for design parameters of intrinsic region length of 6 μm, photoabsorption layer thickness of 50 μm, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the SiGe/Si multi-quantum well solution in achieving the desired high performance photodiode was achieved. © 2012 IEEE. 2017-11-15T02:56:46Z 2017-11-15T02:56:46Z 2012 http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5223
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
description Silicon-on-insulator (SOI) based SiGe quantum well infrared pin photodiode has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. The present work investigates the performance of a virtual lateral PIN photodiode with a SiGe/Si multi-quantum well structure. In this paper, 5 periods of stacked SiGe quantum wells were grown on Si(100). A lateral PIN photodiode consisting of the SiGe/Si multi-quantum well layers as the active absorption layer with intensity response in the 700-1600 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.89 A/W, 71% and 21 GHz respectively for design parameters of intrinsic region length of 6 μm, photoabsorption layer thickness of 50 μm, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the SiGe/Si multi-quantum well solution in achieving the desired high performance photodiode was achieved. © 2012 IEEE.
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author Menon, P.S.
Tasirin, S.K.
Ahmad, I.
Abdullah, S.F.
spellingShingle Menon, P.S.
Tasirin, S.K.
Ahmad, I.
Abdullah, S.F.
High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well
author_facet Menon, P.S.
Tasirin, S.K.
Ahmad, I.
Abdullah, S.F.
author_sort Menon, P.S.
title High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well
title_short High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well
title_full High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well
title_fullStr High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well
title_full_unstemmed High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well
title_sort high performance of a soi-based lateral pin photodiode using sige/si multilayer quantum well
publishDate 2017
url http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5223
_version_ 1644493620224458752
score 13.211869

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