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High performance silicon lateral PIN photodiode

Start Photodetectors with high responsivity in Si-related processes are required for high speed optoelectronic applications such as fiber optic data communication systems. In this paper, the performance of a virtual lateral PIN photodiode with intensity response in the 200-1000 nm wavelength range w...

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Main Authors: Tasirin, S.K., Menon, P.S., Ahmad, I., Abdullah, S.F.
Format: Article
Language:English
Published: 2017
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spelling my.uniten.dspace-52182018-01-23T04:29:04Z High performance silicon lateral PIN photodiode Tasirin, S.K. Menon, P.S. Ahmad, I. Abdullah, S.F. Start Photodetectors with high responsivity in Si-related processes are required for high speed optoelectronic applications such as fiber optic data communication systems. In this paper, the performance of a virtual lateral PIN photodiode with intensity response in the 200-1000 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.62 A/W and 13.1 GHz respectively for design parameters of intrinsic region length of 6 μm, photoabsorption layer thickness of 50 μm, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the decrease in device size enabled the realization of a high performance lateral p-i-n photodiode. © Published under licence by IOP Publishing Ltd. 2017-11-15T02:56:42Z 2017-11-15T02:56:42Z 2013 Article 10.1088/1755-1315/16/1/012032 en
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
language English
description Start Photodetectors with high responsivity in Si-related processes are required for high speed optoelectronic applications such as fiber optic data communication systems. In this paper, the performance of a virtual lateral PIN photodiode with intensity response in the 200-1000 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.62 A/W and 13.1 GHz respectively for design parameters of intrinsic region length of 6 μm, photoabsorption layer thickness of 50 μm, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the decrease in device size enabled the realization of a high performance lateral p-i-n photodiode. © Published under licence by IOP Publishing Ltd.
format Article
author Tasirin, S.K.
Menon, P.S.
Ahmad, I.
Abdullah, S.F.
spellingShingle Tasirin, S.K.
Menon, P.S.
Ahmad, I.
Abdullah, S.F.
High performance silicon lateral PIN photodiode
author_facet Tasirin, S.K.
Menon, P.S.
Ahmad, I.
Abdullah, S.F.
author_sort Tasirin, S.K.
title High performance silicon lateral PIN photodiode
title_short High performance silicon lateral PIN photodiode
title_full High performance silicon lateral PIN photodiode
title_fullStr High performance silicon lateral PIN photodiode
title_full_unstemmed High performance silicon lateral PIN photodiode
title_sort high performance silicon lateral pin photodiode
publishDate 2017
_version_ 1644493618719752192
score 13.222552

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