Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method
This paper aims to study the effect of process parameter variation on a nano-scaled planar p-type MOSFET (metal-oxide-semiconductor field-effect transistor) device for 22 nm technology using Taguchi's L9 orthogonal array. The device was constructed with high-k/metal gate consisting of Titanium...
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| Main Authors: | , , , , |
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2017
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| Online Access: | http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5196 |
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