Theoretical study of the ?2-graphyne p-n junction diode devices
Due to the tunable bandgap of ?2-graphyne, there is an expectation that this structure is a favorable candidate for p-n junction diode devices. The characteristic of the pure and hydrogenated ?2-graphyne nanoribbon structures is modeled and investigated from the electrostatic point of view. The char...
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my.uniten.dspace-364182025-03-03T15:42:20Z Theoretical study of the ?2-graphyne p-n junction diode devices Neshani S. Ahmadi M.T. Golzan M.M. 57226600800 26039596800 25633569400 Electric power transmission Energy gap Hydrogenation Quantum theory Semiconductor junctions Donor and acceptor Donor-doping Graphyne Nanoribbon structures One dimension Pn junction diodes Space charge regions Theoretical study Tunable Band-gap Two-dimensions Electric fields Due to the tunable bandgap of ?2-graphyne, there is an expectation that this structure is a favorable candidate for p-n junction diode devices. The characteristic of the pure and hydrogenated ?2-graphyne nanoribbon structures is modeled and investigated from the electrostatic point of view. The charge distribution is approximated in one and two dimensions. The space charge region wide, electric field and the potential along with the current density are calculated for different donor and acceptor doping amounts. Our survey includes various simulated hydrogenated and Oxygenated molecular devices with different unit cell numbers, and their density of states, transmission spectrum, and current voltage diagrams were obtained using VNL Quantum wise ATK software. The results indicate the reduction of the depletion region and the creation of new energy levels in the band gap of the system. The interaction and bending effects of these new levels with the intrinsic levels are also observed. ? 2024 Elsevier B.V. Final 2025-03-03T07:42:20Z 2025-03-03T07:42:20Z 2024 Article 10.1016/j.physb.2024.416127 2-s2.0-85194403293 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85194403293&doi=10.1016%2fj.physb.2024.416127&partnerID=40&md5=9f333c47ebdd6719c3678fa008400205 https://irepository.uniten.edu.my/handle/123456789/36418 688 416127 Elsevier B.V. Scopus |
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Electric power transmission Energy gap Hydrogenation Quantum theory Semiconductor junctions Donor and acceptor Donor-doping Graphyne Nanoribbon structures One dimension Pn junction diodes Space charge regions Theoretical study Tunable Band-gap Two-dimensions Electric fields |
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Electric power transmission Energy gap Hydrogenation Quantum theory Semiconductor junctions Donor and acceptor Donor-doping Graphyne Nanoribbon structures One dimension Pn junction diodes Space charge regions Theoretical study Tunable Band-gap Two-dimensions Electric fields Neshani S. Ahmadi M.T. Golzan M.M. Theoretical study of the ?2-graphyne p-n junction diode devices |
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Due to the tunable bandgap of ?2-graphyne, there is an expectation that this structure is a favorable candidate for p-n junction diode devices. The characteristic of the pure and hydrogenated ?2-graphyne nanoribbon structures is modeled and investigated from the electrostatic point of view. The charge distribution is approximated in one and two dimensions. The space charge region wide, electric field and the potential along with the current density are calculated for different donor and acceptor doping amounts. Our survey includes various simulated hydrogenated and Oxygenated molecular devices with different unit cell numbers, and their density of states, transmission spectrum, and current voltage diagrams were obtained using VNL Quantum wise ATK software. The results indicate the reduction of the depletion region and the creation of new energy levels in the band gap of the system. The interaction and bending effects of these new levels with the intrinsic levels are also observed. ? 2024 Elsevier B.V. |
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57226600800 |
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57226600800 Neshani S. Ahmadi M.T. Golzan M.M. |
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Article |
| author |
Neshani S. Ahmadi M.T. Golzan M.M. |
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Neshani S. |
| title |
Theoretical study of the ?2-graphyne p-n junction diode devices |
| title_short |
Theoretical study of the ?2-graphyne p-n junction diode devices |
| title_full |
Theoretical study of the ?2-graphyne p-n junction diode devices |
| title_fullStr |
Theoretical study of the ?2-graphyne p-n junction diode devices |
| title_full_unstemmed |
Theoretical study of the ?2-graphyne p-n junction diode devices |
| title_sort |
theoretical study of the ?2-graphyne p-n junction diode devices |
| publisher |
Elsevier B.V. |
| publishDate |
2025 |
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1825816021668200448 |
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13.244413 |