A comprehensive photovoltaic study on tungsten disulfide (WS2) buffer layer based CdTe solar cell
Transition metal di-chalcogenides (TMCDs)-Tungsten disulfide (WS2) exhibit excellent optoelectronic properties such as suitable bandgap, high absorption coefficient, good conductivity, high carrier mobility, etc. to be used as a photovoltaic material for thin-film solar cells. In the present work, w...
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my.uniten.dspace-342462024-10-14T11:18:37Z A comprehensive photovoltaic study on tungsten disulfide (WS2) buffer layer based CdTe solar cell Emon E.I. Islam A.M. Sobayel M.K. Islam S. Akhtaruzzaman M. Amin N. Ahmed A. Rashid M.J. 57221378098 57221381145 57194049079 57192298975 57195441001 7102424614 23072379600 56754641100 Buffer layer CdTe Solar cell Numerical study Transition metal di-chalcogenides (TMCDs) Tungsten disulfide (WS<sub>2</sub>) Transition metal di-chalcogenides (TMCDs)-Tungsten disulfide (WS2) exhibit excellent optoelectronic properties such as suitable bandgap, high absorption coefficient, good conductivity, high carrier mobility, etc. to be used as a photovoltaic material for thin-film solar cells. In the present work, we have replaced the traditional buffer CdS and ITO/ZnO window layer in CdTe solar cells with the non-toxic, earth-abundant WS2 buffer and SnO2 window layer, respectively. The SCAPS-1D solar simulator is used to investigate the potentiality of WS2 as buffer material in CdTe solar cells. This numerical study provides a comparison of the performances between the proposed structure: SnO2/WS2/CdTe/Au and the baseline structure: ITO/ZnO/CdS/CdTe/Au. The impacts of the charge carrier generation rate, spectral response, current-voltage characteristics, bulk defect density, defect density at buffer/absorber interface, operating temperature, and capacitance-voltage characteristics on the solar cell performance parameters have also been analyzed. The tolerance level of defect density in WS2 bulk and WS2/CdTe interface are found to be 1017 cm?3 and 1012 cm?3, respectively. The temperature study reveals the poor structural robustness and thermal stability of the proposed cell. The conversion efficiency of the proposed cell has found to be 20.55% at the optimized device structure. Nevertheles, these findings may provide an insight to fabricate viable, environment friendly, and inexpensive CdTe thin-film solar cells. � 2023 Final 2024-10-14T03:18:37Z 2024-10-14T03:18:37Z 2023 Article 10.1016/j.heliyon.2023.e14438 2-s2.0-85150162922 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85150162922&doi=10.1016%2fj.heliyon.2023.e14438&partnerID=40&md5=3f81c14e0662ed812c125df1b9e82e27 https://irepository.uniten.edu.my/handle/123456789/34246 9 3 e14438 All Open Access Gold Open Access Elsevier Ltd Scopus |
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Buffer layer CdTe Solar cell Numerical study Transition metal di-chalcogenides (TMCDs) Tungsten disulfide (WS<sub>2</sub>) |
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Buffer layer CdTe Solar cell Numerical study Transition metal di-chalcogenides (TMCDs) Tungsten disulfide (WS<sub>2</sub>) Emon E.I. Islam A.M. Sobayel M.K. Islam S. Akhtaruzzaman M. Amin N. Ahmed A. Rashid M.J. A comprehensive photovoltaic study on tungsten disulfide (WS2) buffer layer based CdTe solar cell |
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Transition metal di-chalcogenides (TMCDs)-Tungsten disulfide (WS2) exhibit excellent optoelectronic properties such as suitable bandgap, high absorption coefficient, good conductivity, high carrier mobility, etc. to be used as a photovoltaic material for thin-film solar cells. In the present work, we have replaced the traditional buffer CdS and ITO/ZnO window layer in CdTe solar cells with the non-toxic, earth-abundant WS2 buffer and SnO2 window layer, respectively. The SCAPS-1D solar simulator is used to investigate the potentiality of WS2 as buffer material in CdTe solar cells. This numerical study provides a comparison of the performances between the proposed structure: SnO2/WS2/CdTe/Au and the baseline structure: ITO/ZnO/CdS/CdTe/Au. The impacts of the charge carrier generation rate, spectral response, current-voltage characteristics, bulk defect density, defect density at buffer/absorber interface, operating temperature, and capacitance-voltage characteristics on the solar cell performance parameters have also been analyzed. The tolerance level of defect density in WS2 bulk and WS2/CdTe interface are found to be 1017 cm?3 and 1012 cm?3, respectively. The temperature study reveals the poor structural robustness and thermal stability of the proposed cell. The conversion efficiency of the proposed cell has found to be 20.55% at the optimized device structure. Nevertheles, these findings may provide an insight to fabricate viable, environment friendly, and inexpensive CdTe thin-film solar cells. � 2023 |
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57221378098 |
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57221378098 Emon E.I. Islam A.M. Sobayel M.K. Islam S. Akhtaruzzaman M. Amin N. Ahmed A. Rashid M.J. |
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Article |
author |
Emon E.I. Islam A.M. Sobayel M.K. Islam S. Akhtaruzzaman M. Amin N. Ahmed A. Rashid M.J. |
author_sort |
Emon E.I. |
title |
A comprehensive photovoltaic study on tungsten disulfide (WS2) buffer layer based CdTe solar cell |
title_short |
A comprehensive photovoltaic study on tungsten disulfide (WS2) buffer layer based CdTe solar cell |
title_full |
A comprehensive photovoltaic study on tungsten disulfide (WS2) buffer layer based CdTe solar cell |
title_fullStr |
A comprehensive photovoltaic study on tungsten disulfide (WS2) buffer layer based CdTe solar cell |
title_full_unstemmed |
A comprehensive photovoltaic study on tungsten disulfide (WS2) buffer layer based CdTe solar cell |
title_sort |
comprehensive photovoltaic study on tungsten disulfide (ws2) buffer layer based cdte solar cell |
publisher |
Elsevier Ltd |
publishDate |
2024 |
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1814061047471931392 |
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13.211869 |