Comments: Theoretical verification of using the Ga-doped ZnO as a charge transport layer in an inorganic perovskite solar cell

Theoretical verification of using the Ga-doped ZnO as a charge transport layer in an inorganic perovskite solar cell

The study encompasses the idea to employ a single bandgap-graded transport layer in lieu of two different (transparent conducting oxide and electron transport layer) layers in the perovskite solar cell to increase the overall device functionality. Numerical simulation has been used to investigate th...

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Bibliographic Details
Main Authors:	Ahmed S., Akhtaruzzaman M., Zulhafizhazuan W., Yusoff Y., Alnaser I.A., Karim M.R., Shahiduzzaman M., Sobayel K.
Other Authors:	58573844800
Format:	Article
Published:	Institute of Physics 2024
Subjects:	defect density GZO interface defect perovskite SCAPS-1D Activation energy Conversion efficiency Defect density Electric resistance Electron transport properties Energy gap Gallium compounds II-VI semiconductors Numerical models Perovskite solar cells Transparent conducting oxides Zinc oxide Bandgap graded Charge transport layer Defects density Ga-doped ZnO Inorganics Interface defects Power conversion efficiencies Transport layers Perovskite
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Theoretical verification of using the Ga-doped ZnO as a charge transport layer in an inorganic perovskite solar cell

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