Staff View: Identifying the photon absorption characteristics of Cr-doped Cu2ZnSnS4 (CZTS:Cr) thin film deposited by Co-sputtering technique

Identifying the photon absorption characteristics of Cr-doped Cu2ZnSnS4 (CZTS:Cr) thin film deposited by Co-sputtering technique

This study investigates the potential of a quaternary compound semiconductor to be realized as the absorber layer for third-generation intermediate band solar cells (IBSCs). In this work, the effects of Cr doping into Cu2ZnSnS4 (CZTS) host material to form intermediate band within the forbidden band...

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Main Authors:	Sapeli M.M.I., Chelvanathan P., Hossain M.I., Sajedur Rahman K., Yusoff Y., Amin N.
Other Authors:	57201282111
Format:	Article
Published:	Elsevier B.V. 2024
Subjects:	Co-sputtering Cr doping CZTS thin film Intermediate band Copper compounds Defect states Red Shift Semiconductor doping Solar cells Sputtering Thin films Zinc compounds Absorption characteristics Co-sputtering techniques Cosputtering Cr-doped Cr-doping CZTS thin films Intermediate bands Intermediate-band solar cells Photons absorption Thin-films Tin compounds
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spelling	my.uniten.dspace-338672024-10-14T11:17:21Z Identifying the photon absorption characteristics of Cr-doped Cu2ZnSnS4 (CZTS:Cr) thin film deposited by Co-sputtering technique Sapeli M.M.I. Chelvanathan P. Hossain M.I. Sajedur Rahman K. Yusoff Y. Amin N. 57201282111 35766323200 36448414000 56348138800 57206844407 7102424614 Co-sputtering Cr doping CZTS thin film Intermediate band Copper compounds Defect states Red Shift Semiconductor doping Solar cells Sputtering Thin films Zinc compounds Absorption characteristics Co-sputtering techniques Cosputtering Cr-doped Cr-doping CZTS thin films Intermediate bands Intermediate-band solar cells Photons absorption Thin-films Tin compounds This study investigates the potential of a quaternary compound semiconductor to be realized as the absorber layer for third-generation intermediate band solar cells (IBSCs). In this work, the effects of Cr doping into Cu2ZnSnS4 (CZTS) host material to form intermediate band within the forbidden bandgap were studied. The films were deposited by a co-sputtering technique. It has been found that Cr has a high preference to substitute Zn, followed by Sn, then Cu. Insufficient Cr does not lead to intermediate band but, instead, forms defect states within the bandgap. Excess Cr however deteriorates CZTS (112) peak while at the same time secondary phase of cubic-ZnCr2S4 starts to grow. At sufficient levels of Cr content, absorption coefficient tremendously improved to 105 cm?1, resulting in an additional absorption peak attributed to possible formation of an intermediate band. This intermediate band is located at 1.40 � 0.02 eV below CBM, while the band gap Eg is 1.55 eV. Further optimization to the sulphurization process reveals that the intermediate band peak, ECIL could be adjusted towards blue or red shift by manipulating Cr and/or sulphur content. This yields a bandgap of 1.52 eV with two intermediate bands positioned at 0.90 eV and 1.20 eV above the VBM. These preliminary findings are beneficial prior to realizing a working device of CZTS:Cr intermediate band solar cell. � 2023 Elsevier B.V. Final 2024-10-14T03:17:21Z 2024-10-14T03:17:21Z 2023 Article 10.1016/j.optmat.2023.114528 2-s2.0-85175367151 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85175367151&doi=10.1016%2fj.optmat.2023.114528&partnerID=40&md5=876948e9bd8d4c395bb422b9bbe097f7 https://irepository.uniten.edu.my/handle/123456789/33867 146 114528 Elsevier B.V. Scopus
institution	Universiti Tenaga Nasional
building	UNITEN Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Tenaga Nasional
content_source	UNITEN Institutional Repository
url_provider	http://dspace.uniten.edu.my/
topic	Co-sputtering Cr doping CZTS thin film Intermediate band Copper compounds Defect states Red Shift Semiconductor doping Solar cells Sputtering Thin films Zinc compounds Absorption characteristics Co-sputtering techniques Cosputtering Cr-doped Cr-doping CZTS thin films Intermediate bands Intermediate-band solar cells Photons absorption Thin-films Tin compounds
spellingShingle	Co-sputtering Cr doping CZTS thin film Intermediate band Copper compounds Defect states Red Shift Semiconductor doping Solar cells Sputtering Thin films Zinc compounds Absorption characteristics Co-sputtering techniques Cosputtering Cr-doped Cr-doping CZTS thin films Intermediate bands Intermediate-band solar cells Photons absorption Thin-films Tin compounds Sapeli M.M.I. Chelvanathan P. Hossain M.I. Sajedur Rahman K. Yusoff Y. Amin N. Identifying the photon absorption characteristics of Cr-doped Cu2ZnSnS4 (CZTS:Cr) thin film deposited by Co-sputtering technique
description	This study investigates the potential of a quaternary compound semiconductor to be realized as the absorber layer for third-generation intermediate band solar cells (IBSCs). In this work, the effects of Cr doping into Cu2ZnSnS4 (CZTS) host material to form intermediate band within the forbidden bandgap were studied. The films were deposited by a co-sputtering technique. It has been found that Cr has a high preference to substitute Zn, followed by Sn, then Cu. Insufficient Cr does not lead to intermediate band but, instead, forms defect states within the bandgap. Excess Cr however deteriorates CZTS (112) peak while at the same time secondary phase of cubic-ZnCr2S4 starts to grow. At sufficient levels of Cr content, absorption coefficient tremendously improved to 105 cm?1, resulting in an additional absorption peak attributed to possible formation of an intermediate band. This intermediate band is located at 1.40 � 0.02 eV below CBM, while the band gap Eg is 1.55 eV. Further optimization to the sulphurization process reveals that the intermediate band peak, ECIL could be adjusted towards blue or red shift by manipulating Cr and/or sulphur content. This yields a bandgap of 1.52 eV with two intermediate bands positioned at 0.90 eV and 1.20 eV above the VBM. These preliminary findings are beneficial prior to realizing a working device of CZTS:Cr intermediate band solar cell. � 2023 Elsevier B.V.
author2	57201282111
author_facet	57201282111 Sapeli M.M.I. Chelvanathan P. Hossain M.I. Sajedur Rahman K. Yusoff Y. Amin N.
format	Article
author	Sapeli M.M.I. Chelvanathan P. Hossain M.I. Sajedur Rahman K. Yusoff Y. Amin N.
author_sort	Sapeli M.M.I.
title	Identifying the photon absorption characteristics of Cr-doped Cu2ZnSnS4 (CZTS:Cr) thin film deposited by Co-sputtering technique
title_short	Identifying the photon absorption characteristics of Cr-doped Cu2ZnSnS4 (CZTS:Cr) thin film deposited by Co-sputtering technique
title_full	Identifying the photon absorption characteristics of Cr-doped Cu2ZnSnS4 (CZTS:Cr) thin film deposited by Co-sputtering technique
title_fullStr	Identifying the photon absorption characteristics of Cr-doped Cu2ZnSnS4 (CZTS:Cr) thin film deposited by Co-sputtering technique
title_full_unstemmed	Identifying the photon absorption characteristics of Cr-doped Cu2ZnSnS4 (CZTS:Cr) thin film deposited by Co-sputtering technique
title_sort	identifying the photon absorption characteristics of cr-doped cu2znsns4 (czts:cr) thin film deposited by co-sputtering technique
publisher	Elsevier B.V.
publishDate	2024
_version_	1814061091597058048
score	13.222552

Identifying the photon absorption characteristics of Cr-doped Cu2ZnSnS4 (CZTS:Cr) thin film deposited by Co-sputtering technique

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