Space-Charge-Limited Dark Injection (SCL DI) transient measurements

It is not an easy task to probe the mobility of nanoscale thin layers without using expensive and sophisticated equipments such as Time-of-flight photocurrent charge carrier mobility measurement. We present here a powerful yet cost-effective technique, namely the Space-Charge-Limited Dark Injection...

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Main Authors: Yap B.K., Koh S.P., Tiong S.K., Ong C.N.
Other Authors: 26649255900
Format: Conference paper
Published: 2023
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spelling my.uniten.dspace-306842023-12-29T15:51:19Z Space-Charge-Limited Dark Injection (SCL DI) transient measurements Yap B.K. Koh S.P. Tiong S.K. Ong C.N. 26649255900 22951210700 15128307800 36570734800 Semiconductor materials Transient analysis Bulk materials Charge-carrier mobility Dark injection Injection efficiency Mobility value Nano scale Space-charge-limited Thin layers Time-of-flight photocurrents Transient measurement Carrier mobility It is not an easy task to probe the mobility of nanoscale thin layers without using expensive and sophisticated equipments such as Time-of-flight photocurrent charge carrier mobility measurement. We present here a powerful yet cost-effective technique, namely the Space-Charge-Limited Dark Injection (SCL DI) Transient Measurement that allows us to confirm an ohmic injecting interface, to determine the mobility values of the bulk materials and to study the injection efficiency of the interfaces of the semiconductor materials. � 2010 IEEE. Final 2023-12-29T07:51:19Z 2023-12-29T07:51:19Z 2010 Conference paper 10.1109/SMELEC.2010.5549542 2-s2.0-77957576466 https://www.scopus.com/inward/record.uri?eid=2-s2.0-77957576466&doi=10.1109%2fSMELEC.2010.5549542&partnerID=40&md5=75f8cc803081b3b4134b5aa0347725db https://irepository.uniten.edu.my/handle/123456789/30684 5549542 192 194 Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
topic Semiconductor materials
Transient analysis
Bulk materials
Charge-carrier mobility
Dark injection
Injection efficiency
Mobility value
Nano scale
Space-charge-limited
Thin layers
Time-of-flight photocurrents
Transient measurement
Carrier mobility
spellingShingle Semiconductor materials
Transient analysis
Bulk materials
Charge-carrier mobility
Dark injection
Injection efficiency
Mobility value
Nano scale
Space-charge-limited
Thin layers
Time-of-flight photocurrents
Transient measurement
Carrier mobility
Yap B.K.
Koh S.P.
Tiong S.K.
Ong C.N.
Space-Charge-Limited Dark Injection (SCL DI) transient measurements
description It is not an easy task to probe the mobility of nanoscale thin layers without using expensive and sophisticated equipments such as Time-of-flight photocurrent charge carrier mobility measurement. We present here a powerful yet cost-effective technique, namely the Space-Charge-Limited Dark Injection (SCL DI) Transient Measurement that allows us to confirm an ohmic injecting interface, to determine the mobility values of the bulk materials and to study the injection efficiency of the interfaces of the semiconductor materials. � 2010 IEEE.
author2 26649255900
author_facet 26649255900
Yap B.K.
Koh S.P.
Tiong S.K.
Ong C.N.
format Conference paper
author Yap B.K.
Koh S.P.
Tiong S.K.
Ong C.N.
author_sort Yap B.K.
title Space-Charge-Limited Dark Injection (SCL DI) transient measurements
title_short Space-Charge-Limited Dark Injection (SCL DI) transient measurements
title_full Space-Charge-Limited Dark Injection (SCL DI) transient measurements
title_fullStr Space-Charge-Limited Dark Injection (SCL DI) transient measurements
title_full_unstemmed Space-Charge-Limited Dark Injection (SCL DI) transient measurements
title_sort space-charge-limited dark injection (scl di) transient measurements
publishDate 2023
_version_ 1806425777747525632
score 13.222552