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Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method

In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process param...

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Main Authors: Salehuddin F., Ahmad I., Hamid F.A., Zaharim A., Elgomati H.A., Majlis B.Y., Apte P.R.
Other Authors: 36239165300
Format: Article
Published: 2023
Subjects:
HALO structure
Optimization
P-type mosfets device
Taguchi method
Growth temperature
MOSFET devices
Silicides
Simulators
Taguchi methods
Anneal temperatures
Device simulators
Halo implants
Metal-oxide-semiconductor field-effect transistor
MOSFETs
P-type
Process parameters
Process simulators
Structural optimization
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id my.uniten.dspace-30463
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spelling my.uniten.dspace-304632023-12-29T15:48:08Z Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method Salehuddin F. Ahmad I. Hamid F.A. Zaharim A. Elgomati H.A. Majlis B.Y. Apte P.R. 36239165300 12792216600 6603573875 15119466900 36536722700 6603071546 55725529100 HALO structure Optimization P-type mosfets device Taguchi method Growth temperature MOSFET devices Optimization Silicides Simulators Taguchi methods Anneal temperatures Device simulators Halo implants HALO structure Metal-oxide-semiconductor field-effect transistor MOSFETs P-type Process parameters Process simulators Structural optimization In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process parameters which used were Source/Drain (S/D) implant dose, oxide growth temperature and silicide anneal temperature. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, the most effective process parameters with respect to VTH and ILeak are halo implant dose (40%) and S/D implant dose (52%) respectively. Whereas the second ranking factor affecting VTH and ILeak are oxide growth temperature (32%) and halo implant dose (34%) respectively. The results show that after optimizations approaches is -0.157V at ILeak=0.195mA/?m. Final 2023-12-29T07:48:08Z 2023-12-29T07:48:08Z 2011 Article 2-s2.0-84871458972 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84871458972&partnerID=40&md5=ca09d6c1530fb4ca53e7e8ab5b4aa4b3 https://irepository.uniten.edu.my/handle/123456789/30463 51 1136 1142 Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
topic HALO structure
Optimization
P-type mosfets device
Taguchi method
Growth temperature
MOSFET devices
Optimization
Silicides
Simulators
Taguchi methods
Anneal temperatures
Device simulators
Halo implants
HALO structure
Metal-oxide-semiconductor field-effect transistor
MOSFETs
P-type
Process parameters
Process simulators
Structural optimization
spellingShingle HALO structure
Optimization
P-type mosfets device
Taguchi method
Growth temperature
MOSFET devices
Optimization
Silicides
Simulators
Taguchi methods
Anneal temperatures
Device simulators
Halo implants
HALO structure
Metal-oxide-semiconductor field-effect transistor
MOSFETs
P-type
Process parameters
Process simulators
Structural optimization
Salehuddin F.
Ahmad I.
Hamid F.A.
Zaharim A.
Elgomati H.A.
Majlis B.Y.
Apte P.R.
Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method
description In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process parameters which used were Source/Drain (S/D) implant dose, oxide growth temperature and silicide anneal temperature. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, the most effective process parameters with respect to VTH and ILeak are halo implant dose (40%) and S/D implant dose (52%) respectively. Whereas the second ranking factor affecting VTH and ILeak are oxide growth temperature (32%) and halo implant dose (34%) respectively. The results show that after optimizations approaches is -0.157V at ILeak=0.195mA/?m.
author2 36239165300
author_facet 36239165300
Salehuddin F.
Ahmad I.
Hamid F.A.
Zaharim A.
Elgomati H.A.
Majlis B.Y.
Apte P.R.
format Article
author Salehuddin F.
Ahmad I.
Hamid F.A.
Zaharim A.
Elgomati H.A.
Majlis B.Y.
Apte P.R.
author_sort Salehuddin F.
title Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method
title_short Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method
title_full Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method
title_fullStr Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method
title_full_unstemmed Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method
title_sort optimization of halo structure effects in 45nm p-type mosfets device using taguchi method
publishDate 2023
_version_ 1806427618274181120
score 13.226497

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