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Robust optimization of a silicon lateral pin photodiode

The objective of this paper is to optimize the process parameters for a Si lateral p-in photodiode to obtain high responsivity, frequency response, quantum efficiency and low transient time Four process parameters were chosen, namely the intrinsic region length, photo-absorption layer thickness, the...

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Main Authors: Kalthom Tasirin S., Susthitha Menon P., Ahmad I., Fazlili Abdullah S.
Other Authors: 55602329100
Format: Article
Published: 2023
Subjects:
ATHENA
ATLAS
Photodetector device
Taguchi method
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spelling my.uniten.dspace-294822023-12-28T14:30:12Z Robust optimization of a silicon lateral pin photodiode Kalthom Tasirin S. Susthitha Menon P. Ahmad I. Fazlili Abdullah S. 55602329100 57201289731 12792216600 14319069500 ATHENA ATLAS Photodetector device Taguchi method The objective of this paper is to optimize the process parameters for a Si lateral p-in photodiode to obtain high responsivity, frequency response, quantum efficiency and low transient time Four process parameters were chosen, namely the intrinsic region length, photo-absorption layer thickness, the incident optical power and the bias voltage. The Taguchi method technique was used to optimize the experiment. Two noise factors were used that consist of four measurements for each row of experiment in the L9array. ATHENA and ATLAS module from Silvaco Int. were used for fabrication simulation and electrical characterization. The results obtained for responsivity, quantum efficiency, frequency response and transient time after the optimization approach were 0.62A/W, 96.37%, 13.1 GHz and 2.516 x 10-11 respectively which correspond to the optimization value for intrinsic region length of 6 ?m, photo-absorption layer thickness of 50 ?m, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the optimum solution in achieving the desired high speed photodiode was successfully predicted by using Taguchi optimization method. The percent of improvement for quantum efficientcy is 25%. Final 2023-12-28T06:30:12Z 2023-12-28T06:30:12Z 2012 Article 2-s2.0-84870398422 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84870398422&partnerID=40&md5=781f3241352d68a461769085a25b98ee https://irepository.uniten.edu.my/handle/123456789/29482 6 8 275 281 Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
topic ATHENA
ATLAS
Photodetector device
Taguchi method
spellingShingle ATHENA
ATLAS
Photodetector device
Taguchi method
Kalthom Tasirin S.
Susthitha Menon P.
Ahmad I.
Fazlili Abdullah S.
Robust optimization of a silicon lateral pin photodiode
description The objective of this paper is to optimize the process parameters for a Si lateral p-in photodiode to obtain high responsivity, frequency response, quantum efficiency and low transient time Four process parameters were chosen, namely the intrinsic region length, photo-absorption layer thickness, the incident optical power and the bias voltage. The Taguchi method technique was used to optimize the experiment. Two noise factors were used that consist of four measurements for each row of experiment in the L9array. ATHENA and ATLAS module from Silvaco Int. were used for fabrication simulation and electrical characterization. The results obtained for responsivity, quantum efficiency, frequency response and transient time after the optimization approach were 0.62A/W, 96.37%, 13.1 GHz and 2.516 x 10-11 respectively which correspond to the optimization value for intrinsic region length of 6 ?m, photo-absorption layer thickness of 50 ?m, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the optimum solution in achieving the desired high speed photodiode was successfully predicted by using Taguchi optimization method. The percent of improvement for quantum efficientcy is 25%.
author2 55602329100
author_facet 55602329100
Kalthom Tasirin S.
Susthitha Menon P.
Ahmad I.
Fazlili Abdullah S.
format Article
author Kalthom Tasirin S.
Susthitha Menon P.
Ahmad I.
Fazlili Abdullah S.
author_sort Kalthom Tasirin S.
title Robust optimization of a silicon lateral pin photodiode
title_short Robust optimization of a silicon lateral pin photodiode
title_full Robust optimization of a silicon lateral pin photodiode
title_fullStr Robust optimization of a silicon lateral pin photodiode
title_full_unstemmed Robust optimization of a silicon lateral pin photodiode
title_sort robust optimization of a silicon lateral pin photodiode
publishDate 2023
_version_ 1806426692992892928
score 13.222552

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