Staff View: Numerical insights into the influence of electrical properties of n-CdS buffer layer on the performance of SLG/Mo/p-absorber/n-CdS/n-ZnO/Ag configured thin film photovoltaic devices

Numerical insights into the influence of electrical properties of n-CdS buffer layer on the performance of SLG/Mo/p-absorber/n-CdS/n-ZnO/Ag configured thin film photovoltaic devices

A CdS thin film buffer layer has been widely used as conventional n-type heterojunction partner both in established and emerging thin film photovoltaic devices. In this study, we perform numerical simulation to elucidate the influence of electrical properties of the CdS buffer layer, essentially in...

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Main Authors:	Najm A.S., Chelvanathan P., Tiong S.K., Ferdaous M.T., Shahahmadi S.A., Yusoff Y., Sopian K., Amin N.
Other Authors:	57194407055
Format:	Article
Published:	MDPI AG 2023
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spelling	my.uniten.dspace-266002023-05-29T17:12:34Z Numerical insights into the influence of electrical properties of n-CdS buffer layer on the performance of SLG/Mo/p-absorber/n-CdS/n-ZnO/Ag configured thin film photovoltaic devices Najm A.S. Chelvanathan P. Tiong S.K. Ferdaous M.T. Shahahmadi S.A. Yusoff Y. Sopian K. Amin N. 57194407055 35766323200 15128307800 55567613100 55567116600 57206844407 7003375391 7102424614 A CdS thin film buffer layer has been widely used as conventional n-type heterojunction partner both in established and emerging thin film photovoltaic devices. In this study, we perform numerical simulation to elucidate the influence of electrical properties of the CdS buffer layer, essentially in terms of carrier mobility and carrier concentration on the performance of SLG/Mo/p- Absorber/n-CdS/n-ZnO/Ag configured thin film photovoltaic devices, by using the Solar Cell Capacitance Simulator (SCAPS-1D). A wide range of p-type absorber layers with a band gap from 0.9 to 1.7 eV and electron affinity from 3.7 to 4.7 eV have been considered in this simulation study. For an ideal absorber layer (no defect), the carrier mobility and carrier concentration of CdS buffer layer do not significantly alter the maximum attainable efficiency. Generally, it was revealed that for an absorber layer with a conduction band offset (CBO) that is more than 0.3 eV, Jsc is strongly dependent on the carrier mobility and carrier concentration of the CdS buffer layer, whereas Voc is predominantly dependent on the back contact barrier height. However, as the bulk defect density of the absorber layer is increased from 1014 to 1018 cm-3, a CdS buffer layer with higher carrier mobility and carrier concentration is an imperative requirement to a yield device with higher conversion efficiency and a larger band gap-CBO window for realization of a functional device. Most tellingly, simulation outcomes from this study reveal that electrical properties of the CdS buffer layer play a decisive role in determining the progress of emerging p-type photo-absorber layer materials, particularly during the embryonic device development stage. � 2021 by the authors. Final 2023-05-29T09:12:34Z 2023-05-29T09:12:34Z 2021 Article 10.3390/coatings11010052 2-s2.0-85099645613 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85099645613&doi=10.3390%2fcoatings11010052&partnerID=40&md5=1036e398c22967d01ffe0767e5558bdb https://irepository.uniten.edu.my/handle/123456789/26600 11 1 52 1 17 All Open Access, Gold MDPI AG Scopus
institution	Universiti Tenaga Nasional
building	UNITEN Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Tenaga Nasional
content_source	UNITEN Institutional Repository
url_provider	http://dspace.uniten.edu.my/
description	A CdS thin film buffer layer has been widely used as conventional n-type heterojunction partner both in established and emerging thin film photovoltaic devices. In this study, we perform numerical simulation to elucidate the influence of electrical properties of the CdS buffer layer, essentially in terms of carrier mobility and carrier concentration on the performance of SLG/Mo/p- Absorber/n-CdS/n-ZnO/Ag configured thin film photovoltaic devices, by using the Solar Cell Capacitance Simulator (SCAPS-1D). A wide range of p-type absorber layers with a band gap from 0.9 to 1.7 eV and electron affinity from 3.7 to 4.7 eV have been considered in this simulation study. For an ideal absorber layer (no defect), the carrier mobility and carrier concentration of CdS buffer layer do not significantly alter the maximum attainable efficiency. Generally, it was revealed that for an absorber layer with a conduction band offset (CBO) that is more than 0.3 eV, Jsc is strongly dependent on the carrier mobility and carrier concentration of the CdS buffer layer, whereas Voc is predominantly dependent on the back contact barrier height. However, as the bulk defect density of the absorber layer is increased from 1014 to 1018 cm-3, a CdS buffer layer with higher carrier mobility and carrier concentration is an imperative requirement to a yield device with higher conversion efficiency and a larger band gap-CBO window for realization of a functional device. Most tellingly, simulation outcomes from this study reveal that electrical properties of the CdS buffer layer play a decisive role in determining the progress of emerging p-type photo-absorber layer materials, particularly during the embryonic device development stage. � 2021 by the authors.
author2	57194407055
author_facet	57194407055 Najm A.S. Chelvanathan P. Tiong S.K. Ferdaous M.T. Shahahmadi S.A. Yusoff Y. Sopian K. Amin N.
format	Article
author	Najm A.S. Chelvanathan P. Tiong S.K. Ferdaous M.T. Shahahmadi S.A. Yusoff Y. Sopian K. Amin N.
spellingShingle	Najm A.S. Chelvanathan P. Tiong S.K. Ferdaous M.T. Shahahmadi S.A. Yusoff Y. Sopian K. Amin N. Numerical insights into the influence of electrical properties of n-CdS buffer layer on the performance of SLG/Mo/p-absorber/n-CdS/n-ZnO/Ag configured thin film photovoltaic devices
author_sort	Najm A.S.
title	Numerical insights into the influence of electrical properties of n-CdS buffer layer on the performance of SLG/Mo/p-absorber/n-CdS/n-ZnO/Ag configured thin film photovoltaic devices
title_short	Numerical insights into the influence of electrical properties of n-CdS buffer layer on the performance of SLG/Mo/p-absorber/n-CdS/n-ZnO/Ag configured thin film photovoltaic devices
title_full	Numerical insights into the influence of electrical properties of n-CdS buffer layer on the performance of SLG/Mo/p-absorber/n-CdS/n-ZnO/Ag configured thin film photovoltaic devices
title_fullStr	Numerical insights into the influence of electrical properties of n-CdS buffer layer on the performance of SLG/Mo/p-absorber/n-CdS/n-ZnO/Ag configured thin film photovoltaic devices
title_full_unstemmed	Numerical insights into the influence of electrical properties of n-CdS buffer layer on the performance of SLG/Mo/p-absorber/n-CdS/n-ZnO/Ag configured thin film photovoltaic devices
title_sort	numerical insights into the influence of electrical properties of n-cds buffer layer on the performance of slg/mo/p-absorber/n-cds/n-zno/ag configured thin film photovoltaic devices
publisher	MDPI AG
publishDate	2023
_version_	1806427986713378816
score	13.211869

Numerical insights into the influence of electrical properties of n-CdS buffer layer on the performance of SLG/Mo/p-absorber/n-CdS/n-ZnO/Ag configured thin film photovoltaic devices

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