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A numerical investigation on the combined effects of mose2 interface layer and graded bandgap absorber in cigs thin film solar cells

The influence of Molybdenum diselenide (MoSe2) as an interfacial layer between Cu(In,Ga)Se2 (CIGS) absorber layer and Molybdenum (Mo) back contact in a conventional CIGS thin-film solar cell was investigated numerically using SCAPS-1D (a Solar Cell Capacitance Simulator). Using graded bandgap profil...

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Main Authors: Za�abar F.I., Yusoff Y., Mohamed H., Abdullah S.F., Mahmood Zuhdi A.W., Amin N., Chelvanathan P., Bahrudin M.S., Rahman K.S., Samsudin N.A., Abdullah W.S.W.
Other Authors: 56374530600
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Published: MDPI AG 2023
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spelling my.uniten.dspace-260602023-05-29T17:06:27Z A numerical investigation on the combined effects of mose2 interface layer and graded bandgap absorber in cigs thin film solar cells Za�abar F.I. Yusoff Y. Mohamed H. Abdullah S.F. Mahmood Zuhdi A.W. Amin N. Chelvanathan P. Bahrudin M.S. Rahman K.S. Samsudin N.A. Abdullah W.S.W. 56374530600 57206844407 57136356100 14319069500 57211453005 7102424614 35766323200 55603412800 56348138800 57190525429 57209655076 The influence of Molybdenum diselenide (MoSe2) as an interfacial layer between Cu(In,Ga)Se2 (CIGS) absorber layer and Molybdenum (Mo) back contact in a conventional CIGS thin-film solar cell was investigated numerically using SCAPS-1D (a Solar Cell Capacitance Simulator). Using graded bandgap profile of the absorber layer that consist of both back grading (BG) and front grading (FG), which is defined as double grading (DG), attribution to the variation in Ga content was studied. The key focus of this study is to explore the combinatorial effects of MoSe2 contact layer and Ga grading of the absorber to suppress carrier losses due to back contact recombination and resistance that usually occur in case of standard Mo thin films. Thickness, bandgap energy, electron affinity and carrier concentration of the MoSe2 layer were all varied to determine the best configuration for incorporating into the CIGS solar cell structure. A bandgap grading profile that offers optimum functionality in the proposed configuration with additional MoSe2 layer has also been investigated. From the overall results, CIGS solar cells with thin MoSe2 layer and high acceptor doping concentration have been found to outperform the devices without MoSe2 layer, with an increase in efficiency from 20.19% to 23.30%. The introduction of bandgap grading in the front and back interfaces of the absorber layer further improves both open-circuit voltage (VOC) and short-circuit current density (JSC), most likely due to the additional quasi-electric field beneficial for carrier collection and reduced back surface and bulk recombination. A maximum power conversion efficiency (PCE) of 28.06%, fill factor (FF) of 81.89%, JSC of 39.45 mA/cm2, and VOC of 0.868 V were achieved by optimizing the properties of MoSe2 layer and bandgap grading configuration of the absorber layer. This study provides an insight into the different possibilities for designing higher efficiency CIGS solar cell structure through the manipulation of naturally formed MoSe2 layer and absorber bandgap engineering that can be experimentally replicated. � 2021 by the authors. Licensee MDPI, Basel, Switzerland. Final 2023-05-29T09:06:27Z 2023-05-29T09:06:27Z 2021 Article 10.3390/coatings11080930 2-s2.0-85112230355 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85112230355&doi=10.3390%2fcoatings11080930&partnerID=40&md5=0a040c99204b214b04be74b14c562a6d https://irepository.uniten.edu.my/handle/123456789/26060 11 8 930 All Open Access, Gold, Green MDPI AG Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
description The influence of Molybdenum diselenide (MoSe2) as an interfacial layer between Cu(In,Ga)Se2 (CIGS) absorber layer and Molybdenum (Mo) back contact in a conventional CIGS thin-film solar cell was investigated numerically using SCAPS-1D (a Solar Cell Capacitance Simulator). Using graded bandgap profile of the absorber layer that consist of both back grading (BG) and front grading (FG), which is defined as double grading (DG), attribution to the variation in Ga content was studied. The key focus of this study is to explore the combinatorial effects of MoSe2 contact layer and Ga grading of the absorber to suppress carrier losses due to back contact recombination and resistance that usually occur in case of standard Mo thin films. Thickness, bandgap energy, electron affinity and carrier concentration of the MoSe2 layer were all varied to determine the best configuration for incorporating into the CIGS solar cell structure. A bandgap grading profile that offers optimum functionality in the proposed configuration with additional MoSe2 layer has also been investigated. From the overall results, CIGS solar cells with thin MoSe2 layer and high acceptor doping concentration have been found to outperform the devices without MoSe2 layer, with an increase in efficiency from 20.19% to 23.30%. The introduction of bandgap grading in the front and back interfaces of the absorber layer further improves both open-circuit voltage (VOC) and short-circuit current density (JSC), most likely due to the additional quasi-electric field beneficial for carrier collection and reduced back surface and bulk recombination. A maximum power conversion efficiency (PCE) of 28.06%, fill factor (FF) of 81.89%, JSC of 39.45 mA/cm2, and VOC of 0.868 V were achieved by optimizing the properties of MoSe2 layer and bandgap grading configuration of the absorber layer. This study provides an insight into the different possibilities for designing higher efficiency CIGS solar cell structure through the manipulation of naturally formed MoSe2 layer and absorber bandgap engineering that can be experimentally replicated. � 2021 by the authors. Licensee MDPI, Basel, Switzerland.
author2 56374530600
author_facet 56374530600
Za�abar F.I.
Yusoff Y.
Mohamed H.
Abdullah S.F.
Mahmood Zuhdi A.W.
Amin N.
Chelvanathan P.
Bahrudin M.S.
Rahman K.S.
Samsudin N.A.
Abdullah W.S.W.
format Article
author Za�abar F.I.
Yusoff Y.
Mohamed H.
Abdullah S.F.
Mahmood Zuhdi A.W.
Amin N.
Chelvanathan P.
Bahrudin M.S.
Rahman K.S.
Samsudin N.A.
Abdullah W.S.W.
spellingShingle Za�abar F.I.
Yusoff Y.
Mohamed H.
Abdullah S.F.
Mahmood Zuhdi A.W.
Amin N.
Chelvanathan P.
Bahrudin M.S.
Rahman K.S.
Samsudin N.A.
Abdullah W.S.W.
A numerical investigation on the combined effects of mose2 interface layer and graded bandgap absorber in cigs thin film solar cells
author_sort Za�abar F.I.
title A numerical investigation on the combined effects of mose2 interface layer and graded bandgap absorber in cigs thin film solar cells
title_short A numerical investigation on the combined effects of mose2 interface layer and graded bandgap absorber in cigs thin film solar cells
title_full A numerical investigation on the combined effects of mose2 interface layer and graded bandgap absorber in cigs thin film solar cells
title_fullStr A numerical investigation on the combined effects of mose2 interface layer and graded bandgap absorber in cigs thin film solar cells
title_full_unstemmed A numerical investigation on the combined effects of mose2 interface layer and graded bandgap absorber in cigs thin film solar cells
title_sort numerical investigation on the combined effects of mose2 interface layer and graded bandgap absorber in cigs thin film solar cells
publisher MDPI AG
publishDate 2023
_version_ 1806423272266399744
score 13.222552

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