Effect of deep-level defect density of the absorber layer and n/i interface in perovskite solar cells by SCAPS-1D
In this paper, Solar Cell Capacitance Simulator-1D (SCAPS-1D) was used to study the absorber layer defect density and n/i interface of perovskite solar cells versus various cell thickness values. The planar p-i-n structure was defined as PEDOT:PSS/Perovskite/CdS, and its performance was simulated. P...
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my.uniten.dspace-255672023-05-29T16:11:01Z Effect of deep-level defect density of the absorber layer and n/i interface in perovskite solar cells by SCAPS-1D Chowdhury M.S. Shahahmadi S.A. Chelvanathan P. Tiong S.K. Amin N. Techato K. Nuthammachot N. Chowdhury T. Suklueng M. 57224213317 55567116600 35766323200 15128307800 7102424614 25321184300 57204889352 57221420455 55896993000 In this paper, Solar Cell Capacitance Simulator-1D (SCAPS-1D) was used to study the absorber layer defect density and n/i interface of perovskite solar cells versus various cell thickness values. The planar p-i-n structure was defined as PEDOT:PSS/Perovskite/CdS, and its performance was simulated. Power conversion efficiency >25% can be achieved at <1014 cm?3 defect density and >400 nm thickness of absorber layer, respectively. The study assumed 0.6 eV Gaussian defect energy level below the perovskite's conduction band with a characteristic energy of 0.1 eV. These conditions resulted in an identical outcome on the n/i interface. These results show constraints on numerical simulation for correlation between defect mechanism and performance. � 2019 The Authors Final 2023-05-29T08:11:01Z 2023-05-29T08:11:01Z 2020 Note 10.1016/j.rinp.2019.102839 2-s2.0-85076824545 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85076824545&doi=10.1016%2fj.rinp.2019.102839&partnerID=40&md5=5a623cf395ef8c2efdf44a51cf30afb3 https://irepository.uniten.edu.my/handle/123456789/25567 16 102839 All Open Access, Gold Elsevier B.V. Scopus |
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In this paper, Solar Cell Capacitance Simulator-1D (SCAPS-1D) was used to study the absorber layer defect density and n/i interface of perovskite solar cells versus various cell thickness values. The planar p-i-n structure was defined as PEDOT:PSS/Perovskite/CdS, and its performance was simulated. Power conversion efficiency >25% can be achieved at <1014 cm?3 defect density and >400 nm thickness of absorber layer, respectively. The study assumed 0.6 eV Gaussian defect energy level below the perovskite's conduction band with a characteristic energy of 0.1 eV. These conditions resulted in an identical outcome on the n/i interface. These results show constraints on numerical simulation for correlation between defect mechanism and performance. � 2019 The Authors |
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57224213317 Chowdhury M.S. Shahahmadi S.A. Chelvanathan P. Tiong S.K. Amin N. Techato K. Nuthammachot N. Chowdhury T. Suklueng M. |
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Chowdhury M.S. Shahahmadi S.A. Chelvanathan P. Tiong S.K. Amin N. Techato K. Nuthammachot N. Chowdhury T. Suklueng M. |
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Chowdhury M.S. Shahahmadi S.A. Chelvanathan P. Tiong S.K. Amin N. Techato K. Nuthammachot N. Chowdhury T. Suklueng M. Effect of deep-level defect density of the absorber layer and n/i interface in perovskite solar cells by SCAPS-1D |
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Chowdhury M.S. |
title |
Effect of deep-level defect density of the absorber layer and n/i interface in perovskite solar cells by SCAPS-1D |
title_short |
Effect of deep-level defect density of the absorber layer and n/i interface in perovskite solar cells by SCAPS-1D |
title_full |
Effect of deep-level defect density of the absorber layer and n/i interface in perovskite solar cells by SCAPS-1D |
title_fullStr |
Effect of deep-level defect density of the absorber layer and n/i interface in perovskite solar cells by SCAPS-1D |
title_full_unstemmed |
Effect of deep-level defect density of the absorber layer and n/i interface in perovskite solar cells by SCAPS-1D |
title_sort |
effect of deep-level defect density of the absorber layer and n/i interface in perovskite solar cells by scaps-1d |
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Elsevier B.V. |
publishDate |
2023 |
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1806427322055655424 |
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13.222552 |