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Performance Comparison of Narrow Bandgap Semiconductor Cells for Photovoltaic and Thermophotovoltaic Applications

Cells; Cytology; Energy gap; Gallium; Gallium arsenide; III-V semiconductors; Indium; Indium arsenide; Infrared radiation; Narrow band gap semiconductors; Photocurrents; Photonics; Semiconducting antimony compounds; Semiconducting germanium; Semiconducting indium; Semiconducting indium gallium arsen...

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Main Authors: Gamel M.M.A., Ker P.J., Lee H.J., Rashid W.E.S.W.A., Jamaludin M.Z., Mohammed A.I.A.
Other Authors: 57215306835
Format: Conference Paper
Published: Institute of Electrical and Electronics Engineers Inc. 2023
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spelling my.uniten.dspace-254912023-05-29T16:10:05Z Performance Comparison of Narrow Bandgap Semiconductor Cells for Photovoltaic and Thermophotovoltaic Applications Gamel M.M.A. Ker P.J. Lee H.J. Rashid W.E.S.W.A. Jamaludin M.Z. Mohammed A.I.A. 57215306835 37461740800 57190622221 57204586520 57216839721 57219573168 Cells; Cytology; Energy gap; Gallium; Gallium arsenide; III-V semiconductors; Indium; Indium arsenide; Infrared radiation; Narrow band gap semiconductors; Photocurrents; Photonics; Semiconducting antimony compounds; Semiconducting germanium; Semiconducting indium; Semiconducting indium gallium arsenide; Semiconductor alloys; Comparative studies; Illumination spectrum; Indium gallium arsenide; Performance comparison; Radiation temperature; Surface recombinations; Thermophotovoltaic applications; Thermophotovoltaics; Solar cells Narrow bandgap (NB) materials provide better potential for infrared radiation conversion to electricity from solar or various thermophotovoltaic (TPV) spectrums. Different NB materials generate diverse output performance depending on the properties of materials crystal and cell configuration. Decreasing the bandgap of the materials will improve the collection of longer wavelength photons, but that tends to increase the recombination rate and reduce cell efficiency (?). This paper investigates the performance of NB cells. Silvaco TCAD software was used to simulate the output performance of germanium (Ge), indium arsenide (InAs), gallium antimonide (GaSb), and indium gallium arsenide (InGaAs) cells under solar spectrum AM1.5 and 1000 K illumination spectrums. It was found that InGaAs is the most outstanding material for photovoltaic (PV) application and TPV application at 1000 K radiation temperature. The comparative study and conclusion drawn in this work highlight several limitations in NB cells configuration, such as the high surface recombination rate in GaSb and InAs TPV cell, which reduces photocurrent collection. � 2020 IEEE. Final 2023-05-29T08:10:05Z 2023-05-29T08:10:05Z 2020 Conference Paper 10.1109/ICP46580.2020.9206452 2-s2.0-85093979403 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85093979403&doi=10.1109%2fICP46580.2020.9206452&partnerID=40&md5=518b68a7ae5fc30aefbb95b94fdd879b https://irepository.uniten.edu.my/handle/123456789/25491 9206452 42 43 Institute of Electrical and Electronics Engineers Inc. Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
description Cells; Cytology; Energy gap; Gallium; Gallium arsenide; III-V semiconductors; Indium; Indium arsenide; Infrared radiation; Narrow band gap semiconductors; Photocurrents; Photonics; Semiconducting antimony compounds; Semiconducting germanium; Semiconducting indium; Semiconducting indium gallium arsenide; Semiconductor alloys; Comparative studies; Illumination spectrum; Indium gallium arsenide; Performance comparison; Radiation temperature; Surface recombinations; Thermophotovoltaic applications; Thermophotovoltaics; Solar cells
author2 57215306835
author_facet 57215306835
Gamel M.M.A.
Ker P.J.
Lee H.J.
Rashid W.E.S.W.A.
Jamaludin M.Z.
Mohammed A.I.A.
format Conference Paper
author Gamel M.M.A.
Ker P.J.
Lee H.J.
Rashid W.E.S.W.A.
Jamaludin M.Z.
Mohammed A.I.A.
spellingShingle Gamel M.M.A.
Ker P.J.
Lee H.J.
Rashid W.E.S.W.A.
Jamaludin M.Z.
Mohammed A.I.A.
Performance Comparison of Narrow Bandgap Semiconductor Cells for Photovoltaic and Thermophotovoltaic Applications
author_sort Gamel M.M.A.
title Performance Comparison of Narrow Bandgap Semiconductor Cells for Photovoltaic and Thermophotovoltaic Applications
title_short Performance Comparison of Narrow Bandgap Semiconductor Cells for Photovoltaic and Thermophotovoltaic Applications
title_full Performance Comparison of Narrow Bandgap Semiconductor Cells for Photovoltaic and Thermophotovoltaic Applications
title_fullStr Performance Comparison of Narrow Bandgap Semiconductor Cells for Photovoltaic and Thermophotovoltaic Applications
title_full_unstemmed Performance Comparison of Narrow Bandgap Semiconductor Cells for Photovoltaic and Thermophotovoltaic Applications
title_sort performance comparison of narrow bandgap semiconductor cells for photovoltaic and thermophotovoltaic applications
publisher Institute of Electrical and Electronics Engineers Inc.
publishDate 2023
_version_ 1806426176451772416
score 13.211869

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