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Optimization of zinc-doped emitter layer thickness and doping concentration for gallium antimonide based thermophotovoltaic cells

Gallium antimonide based thermophotovoltaic cell is a well-known photovoltaic diode that can directly convert thermal radiation into electricity. Recent investigations on the improvement of gallium antimonide thermophotovoltaic cell performance have led to a number of optimization studies, particula...

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Main Authors: Rashid W.E., Gamel M.M.A., Ker P.J., Yao L.K., Rahman N.A., Jing L.H., Jamaludin M.Z.
Other Authors: 57204586520
Format: Article
Published: Akademi Sains Malaysia 2023
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spelling my.uniten.dspace-248402023-05-29T15:27:47Z Optimization of zinc-doped emitter layer thickness and doping concentration for gallium antimonide based thermophotovoltaic cells Rashid W.E. Gamel M.M.A. Ker P.J. Yao L.K. Rahman N.A. Jing L.H. Jamaludin M.Z. 57204586520 57215306835 37461740800 56903550000 57207729143 57190622221 57216839721 Gallium antimonide based thermophotovoltaic cell is a well-known photovoltaic diode that can directly convert thermal radiation into electricity. Recent investigations on the improvement of gallium antimonide thermophotovoltaic cell performance have led to a number of optimization studies, particularly on the cell design structures. However, low conversion efficiency of gallium antimonide thermophotovoltaic cell remains a major challenge in this area. An optimization study was previously demonstrated with increased efficiency up to 6.63 % incorporating an optimum emitter thickness of 0.85 ?m. This work extended the optimization possibilities, aiming to achieve higher power conversion efficiency of gallium antimonide thermophotovoltaic cell. Different doping concentrations of the emitter layer ranging from 1x1018 to 5x1020 cm-3 were studied using Silvaco TCAD simulation software. Within the investigated doping concentrations, the optimum power efficiency of 7.51 % was achieved at 1x1020 cm-3 under AM1.5 illumination condition. Additionally, higher cell performance was achieved with a power efficiency of 7.88 % by employing an emitter layer thickness of 0.15 ?m and a doping concentration of 1.7x1020 cm-3. The success of this work will contribute to a perceptive reference for the future development in practical device fabrication of high-performance gallium antimonide thermophotovoltaic cell. � 2019, Akademi Sains Malaysia. Final 2023-05-29T07:27:47Z 2023-05-29T07:27:47Z 2019 Article 2-s2.0-85084520106 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85084520106&partnerID=40&md5=c218eaf43dda6e56af1ae2b6ff707981 https://irepository.uniten.edu.my/handle/123456789/24840 12 SpecialIssue4 1 9 Akademi Sains Malaysia Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
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country Malaysia
content_provider Universiti Tenaga Nasional
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description Gallium antimonide based thermophotovoltaic cell is a well-known photovoltaic diode that can directly convert thermal radiation into electricity. Recent investigations on the improvement of gallium antimonide thermophotovoltaic cell performance have led to a number of optimization studies, particularly on the cell design structures. However, low conversion efficiency of gallium antimonide thermophotovoltaic cell remains a major challenge in this area. An optimization study was previously demonstrated with increased efficiency up to 6.63 % incorporating an optimum emitter thickness of 0.85 ?m. This work extended the optimization possibilities, aiming to achieve higher power conversion efficiency of gallium antimonide thermophotovoltaic cell. Different doping concentrations of the emitter layer ranging from 1x1018 to 5x1020 cm-3 were studied using Silvaco TCAD simulation software. Within the investigated doping concentrations, the optimum power efficiency of 7.51 % was achieved at 1x1020 cm-3 under AM1.5 illumination condition. Additionally, higher cell performance was achieved with a power efficiency of 7.88 % by employing an emitter layer thickness of 0.15 ?m and a doping concentration of 1.7x1020 cm-3. The success of this work will contribute to a perceptive reference for the future development in practical device fabrication of high-performance gallium antimonide thermophotovoltaic cell. � 2019, Akademi Sains Malaysia.
author2 57204586520
author_facet 57204586520
Rashid W.E.
Gamel M.M.A.
Ker P.J.
Yao L.K.
Rahman N.A.
Jing L.H.
Jamaludin M.Z.
format Article
author Rashid W.E.
Gamel M.M.A.
Ker P.J.
Yao L.K.
Rahman N.A.
Jing L.H.
Jamaludin M.Z.
spellingShingle Rashid W.E.
Gamel M.M.A.
Ker P.J.
Yao L.K.
Rahman N.A.
Jing L.H.
Jamaludin M.Z.
Optimization of zinc-doped emitter layer thickness and doping concentration for gallium antimonide based thermophotovoltaic cells
author_sort Rashid W.E.
title Optimization of zinc-doped emitter layer thickness and doping concentration for gallium antimonide based thermophotovoltaic cells
title_short Optimization of zinc-doped emitter layer thickness and doping concentration for gallium antimonide based thermophotovoltaic cells
title_full Optimization of zinc-doped emitter layer thickness and doping concentration for gallium antimonide based thermophotovoltaic cells
title_fullStr Optimization of zinc-doped emitter layer thickness and doping concentration for gallium antimonide based thermophotovoltaic cells
title_full_unstemmed Optimization of zinc-doped emitter layer thickness and doping concentration for gallium antimonide based thermophotovoltaic cells
title_sort optimization of zinc-doped emitter layer thickness and doping concentration for gallium antimonide based thermophotovoltaic cells
publisher Akademi Sains Malaysia
publishDate 2023
_version_ 1806427632969973760
score 13.222552

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