Optimization of process parameters for threshold voltage and leakage current based on taguchi method
In this study, the effect of process parameters on the threshold voltage (Vth) and leakage current (Ileak) were explored and the optimization of these parameters were carried out using the Taguchi method. The virtual device was initially constructed using ATHENA and ATLAS environment in Silvaco Tech...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Published: |
Universiti Teknikal Malaysia Melaka
2023
|
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| id |
my.uniten.dspace-24183 |
|---|---|
| record_format |
dspace |
| spelling |
my.uniten.dspace-241832023-05-29T14:56:32Z Optimization of process parameters for threshold voltage and leakage current based on taguchi method Noor Faizah Z.A. Ahmad I. Ker P.J. Menon P.S. Afifah Maheran A.H. Mah S.K. 56395444600 12792216600 37461740800 57201289731 36570222300 57191706660 In this study, the effect of process parameters on the threshold voltage (Vth) and leakage current (Ileak) were explored and the optimization of these parameters were carried out using the Taguchi method. The virtual device was initially constructed using ATHENA and ATLAS environment in Silvaco Technology Computer Aided Design (TCAD) tools. The simulation studies were directed under four varying process parameters, which are Vt adjust implantation dose, the halo tiling angle, the S/D implantation dose and the compensation implantation dose. The L9 Orthogonal Array (OA), the signal-to-noise ratio (SNR), and the analysis of variance (ANOVA) were used to study the performance characteristics and to gain an optimum combination of parameter settings. It was revealed that the Vt adjust implantation dose was the most influential parameter on the Vth and Ileak. Furthermore, it also improves the device performance. The result of Vth complied with the projections made by the International Technology Roadmap for Semiconductors (ITRS). � 2018 Universiti Teknikal Malaysia Melaka. All Rights Reserved. Final 2023-05-29T06:56:32Z 2023-05-29T06:56:32Z 2018 Article 2-s2.0-85052023014 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85052023014&partnerID=40&md5=44c4c5e695e2e5d29f97d54ee5b42e6b https://irepository.uniten.edu.my/handle/123456789/24183 10 2-Jul 143 146 Universiti Teknikal Malaysia Melaka Scopus |
| institution |
Universiti Tenaga Nasional |
| building |
UNITEN Library |
| collection |
Institutional Repository |
| continent |
Asia |
| country |
Malaysia |
| content_provider |
Universiti Tenaga Nasional |
| content_source |
UNITEN Institutional Repository |
| url_provider |
http://dspace.uniten.edu.my/ |
| description |
In this study, the effect of process parameters on the threshold voltage (Vth) and leakage current (Ileak) were explored and the optimization of these parameters were carried out using the Taguchi method. The virtual device was initially constructed using ATHENA and ATLAS environment in Silvaco Technology Computer Aided Design (TCAD) tools. The simulation studies were directed under four varying process parameters, which are Vt adjust implantation dose, the halo tiling angle, the S/D implantation dose and the compensation implantation dose. The L9 Orthogonal Array (OA), the signal-to-noise ratio (SNR), and the analysis of variance (ANOVA) were used to study the performance characteristics and to gain an optimum combination of parameter settings. It was revealed that the Vt adjust implantation dose was the most influential parameter on the Vth and Ileak. Furthermore, it also improves the device performance. The result of Vth complied with the projections made by the International Technology Roadmap for Semiconductors (ITRS). � 2018 Universiti Teknikal Malaysia Melaka. All Rights Reserved. |
| author2 |
56395444600 |
| author_facet |
56395444600 Noor Faizah Z.A. Ahmad I. Ker P.J. Menon P.S. Afifah Maheran A.H. Mah S.K. |
| format |
Article |
| author |
Noor Faizah Z.A. Ahmad I. Ker P.J. Menon P.S. Afifah Maheran A.H. Mah S.K. |
| spellingShingle |
Noor Faizah Z.A. Ahmad I. Ker P.J. Menon P.S. Afifah Maheran A.H. Mah S.K. Optimization of process parameters for threshold voltage and leakage current based on taguchi method |
| author_sort |
Noor Faizah Z.A. |
| title |
Optimization of process parameters for threshold voltage and leakage current based on taguchi method |
| title_short |
Optimization of process parameters for threshold voltage and leakage current based on taguchi method |
| title_full |
Optimization of process parameters for threshold voltage and leakage current based on taguchi method |
| title_fullStr |
Optimization of process parameters for threshold voltage and leakage current based on taguchi method |
| title_full_unstemmed |
Optimization of process parameters for threshold voltage and leakage current based on taguchi method |
| title_sort |
optimization of process parameters for threshold voltage and leakage current based on taguchi method |
| publisher |
Universiti Teknikal Malaysia Melaka |
| publishDate |
2023 |
| _version_ |
1806424368983572480 |
| score |
13.222552 |