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Optimization of p-type emitter thickness for GaSb-based thermophotovoltaic cells

Antimony compounds; Cells; Computer software; Cytology; Efficiency; III-V semiconductors; Open circuit voltage; Carnot efficiency; Electrical characteristic; emitter thickness; Gallium antimonide; High output power; Illumination conditions; Thermophoto voltaic cells; Thermophotovoltaics; Gallium com...

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Main Authors: Rashid W.E., Ker P.J., Jamaludin M.Z., Rahman N.A., Khamis M.A.
Other Authors: 57204586520
Format: Conference Paper
Published: Institute of Electrical and Electronics Engineers Inc. 2023
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spelling my.uniten.dspace-236642023-05-29T14:50:52Z Optimization of p-type emitter thickness for GaSb-based thermophotovoltaic cells Rashid W.E. Ker P.J. Jamaludin M.Z. Rahman N.A. Khamis M.A. 57204586520 37461740800 57216839721 57207729143 57204588662 Antimony compounds; Cells; Computer software; Cytology; Efficiency; III-V semiconductors; Open circuit voltage; Carnot efficiency; Electrical characteristic; emitter thickness; Gallium antimonide; High output power; Illumination conditions; Thermophoto voltaic cells; Thermophotovoltaics; Gallium compounds Thermophotovoltaic (TPV) cells that convert thermal heat directly into electricity are attracting attention as they potentially produce high output power densities. Owing to its capability to convert with a Carnot efficiency, an optimization of these cells is essential to further enhance their performance and efficiency. This paper focuses on the optimization of p-type emitter thickness of Gallium Antimonide (GaSb) based TPV cell using Silvaco TCAD simulation software. The simulation works in this paper were validated by having a good agreement with those from the experimental work in terms of the electrical characteristics and efficiency of the GaSb TPV cell. Further simulation was done with different p-type emitter thicknesses ranging from 0.15 ?m to 1.20 ?m, It was demonstrated that the open circuit voltage (Voc) of the cell increases while the short-circuit current density (Jsc) decreases with increasing p-type emitter thickness. Since the rate of increasing Voc is faster than that of decreasing Jsc, higher maximum power efficiency was obtained at an optimum thickness of 0.85 ?m. It was found that, under AM1.5 illumination condition, an increment of power efficiency from 5.91 % to 6.63 % was achieved when increasing p-type emitter thickness from 0.15 ?m to 0.85 ?m. � 2018 IEEE. Final 2023-05-29T06:50:52Z 2023-05-29T06:50:52Z 2018 Conference Paper 10.1109/SMELEC.2018.8481305 2-s2.0-85056251256 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85056251256&doi=10.1109%2fSMELEC.2018.8481305&partnerID=40&md5=a1e0ea8bfbbf4488729105d87ebfc322 https://irepository.uniten.edu.my/handle/123456789/23664 2018-August 8481305 109 112 Institute of Electrical and Electronics Engineers Inc. Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
description Antimony compounds; Cells; Computer software; Cytology; Efficiency; III-V semiconductors; Open circuit voltage; Carnot efficiency; Electrical characteristic; emitter thickness; Gallium antimonide; High output power; Illumination conditions; Thermophoto voltaic cells; Thermophotovoltaics; Gallium compounds
author2 57204586520
author_facet 57204586520
Rashid W.E.
Ker P.J.
Jamaludin M.Z.
Rahman N.A.
Khamis M.A.
format Conference Paper
author Rashid W.E.
Ker P.J.
Jamaludin M.Z.
Rahman N.A.
Khamis M.A.
spellingShingle Rashid W.E.
Ker P.J.
Jamaludin M.Z.
Rahman N.A.
Khamis M.A.
Optimization of p-type emitter thickness for GaSb-based thermophotovoltaic cells
author_sort Rashid W.E.
title Optimization of p-type emitter thickness for GaSb-based thermophotovoltaic cells
title_short Optimization of p-type emitter thickness for GaSb-based thermophotovoltaic cells
title_full Optimization of p-type emitter thickness for GaSb-based thermophotovoltaic cells
title_fullStr Optimization of p-type emitter thickness for GaSb-based thermophotovoltaic cells
title_full_unstemmed Optimization of p-type emitter thickness for GaSb-based thermophotovoltaic cells
title_sort optimization of p-type emitter thickness for gasb-based thermophotovoltaic cells
publisher Institute of Electrical and Electronics Engineers Inc.
publishDate 2023
_version_ 1806424368546316288
score 13.222552

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