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Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software

C (programming language); Computer software; Copper compounds; Efficiency; Energy gap; Gallium compounds; Indium compounds; Layered semiconductors; Open circuit voltage; Short circuit currents; Solar absorbers; Solar cells; Band gap energy; CIGS solar cells; Fill factor; SCAPS 1-D; Temperature coeff...

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Main Authors: Harif M.N., Abdullah S.F., Mahmood Zuhdi A.W., Za'Abar F., Bahrudin M.S., Hasani A.H.
Other Authors: 22634024000
Format: Conference Paper
Published: Institute of Electrical and Electronics Engineers Inc. 2023
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spelling my.uniten.dspace-236612023-05-29T14:50:50Z Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software Harif M.N. Abdullah S.F. Mahmood Zuhdi A.W. Za'Abar F. Bahrudin M.S. Hasani A.H. 22634024000 14319069500 56589966300 57204593023 55603412800 57204586055 C (programming language); Computer software; Copper compounds; Efficiency; Energy gap; Gallium compounds; Indium compounds; Layered semiconductors; Open circuit voltage; Short circuit currents; Solar absorbers; Solar cells; Band gap energy; CIGS solar cells; Fill factor; SCAPS 1-D; Temperature coefficient; Temperature The Copper Indium Gallium Selenide (CIGS) solar cell due to temperature change has been studied and the analysis was simulated using SCAPS 1-D software with the operating temperature varied from 25�C to 50�C. There are 3 parameters of thickness of CIGS absorber layer had been taken into account. The output characteristics were analyzed through a graphical method. The results showed a decreasing performance on the temperature change with respect to the efficiency, fill factor (FF) and open circuit voltage (Voc) except for short circuit current density (Jsc). The average degradation of efficieny, fill factor and open circuit voltage with respect to temperature are 7.87%, 1.61 % and 6.81 % respectively while short current density increase 0.50%. It can also be suggested that there are significant direct correlations between band gap energy and temperature change. � 2018 IEEE. Final 2023-05-29T06:50:50Z 2023-05-29T06:50:50Z 2018 Conference Paper 10.1109/SMELEC.2018.8481333 2-s2.0-85056261541 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85056261541&doi=10.1109%2fSMELEC.2018.8481333&partnerID=40&md5=dcfd5dc861af78f3edecde65cb40bd94 https://irepository.uniten.edu.my/handle/123456789/23661 2018-August 8481333 201 204 Institute of Electrical and Electronics Engineers Inc. Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
description C (programming language); Computer software; Copper compounds; Efficiency; Energy gap; Gallium compounds; Indium compounds; Layered semiconductors; Open circuit voltage; Short circuit currents; Solar absorbers; Solar cells; Band gap energy; CIGS solar cells; Fill factor; SCAPS 1-D; Temperature coefficient; Temperature
author2 22634024000
author_facet 22634024000
Harif M.N.
Abdullah S.F.
Mahmood Zuhdi A.W.
Za'Abar F.
Bahrudin M.S.
Hasani A.H.
format Conference Paper
author Harif M.N.
Abdullah S.F.
Mahmood Zuhdi A.W.
Za'Abar F.
Bahrudin M.S.
Hasani A.H.
spellingShingle Harif M.N.
Abdullah S.F.
Mahmood Zuhdi A.W.
Za'Abar F.
Bahrudin M.S.
Hasani A.H.
Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software
author_sort Harif M.N.
title Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software
title_short Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software
title_full Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software
title_fullStr Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software
title_full_unstemmed Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software
title_sort simulation analysis on cigs solar cell on different absorber layer thickness subject to temperature change using scaps 1-d software
publisher Institute of Electrical and Electronics Engineers Inc.
publishDate 2023
_version_ 1806424100852203520
score 13.211869

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