Power-loss breakdown of a 750-V 100-kW 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules
Conversion efficiency; HVDC power transmission; MOSFET devices; Silicon carbide; Bidirectional isolated dc-dc converter; Conduction loss; Control circuits; Dual active bridges; Gate drives; Power-losses; SiC MOSFET; Switching loss; DC-DC converters
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Institute of Electrical and Electronics Engineers Inc.
2023
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