Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method
Electron beam lithography; Field effect transistors; Metals; MOS devices; Nanoelectronics; Oxide semiconductors; Reconfigurable hardware; Signal to noise ratio; Silicides; Taguchi methods; Threshold voltage; Titanium dioxide; 22 nm; Compensation implantations; High-k/metal gates; International Techn...
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| Main Authors: | , , , , |
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| Format: | Conference Paper |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2023
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| Summary: | Electron beam lithography; Field effect transistors; Metals; MOS devices; Nanoelectronics; Oxide semiconductors; Reconfigurable hardware; Signal to noise ratio; Silicides; Taguchi methods; Threshold voltage; Titanium dioxide; 22 nm; Compensation implantations; High-k/metal gates; International Technology Roadmap for Semiconductors; L9 orthogonal arrays; PMOS; Process parameter variations; Statistical optimization; MOSFET devices |
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