Wide wavelength range and high speed SiGe/Si multi quantum-well silicon-on-insulator-based lateral PIN photodiode
Silicon-on-insulator (SOI)-based silicon germanium (SiGe) multi quantum-well (MQW) infrared PIN photodiode has a broad range of application including infrared sensors as well as in optical fiber communications. In this paper, we present improvement of a virtual lateral PIN photodiode with a SiGe/Si...
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2023
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my.uniten.dspace-220132023-05-16T10:46:39Z Wide wavelength range and high speed SiGe/Si multi quantum-well silicon-on-insulator-based lateral PIN photodiode Menon P.S. Tasirin S.K. Ahmad I. Abdullah S.F. 57201289731 55602329100 12792216600 14319069500 Silicon-on-insulator (SOI)-based silicon germanium (SiGe) multi quantum-well (MQW) infrared PIN photodiode has a broad range of application including infrared sensors as well as in optical fiber communications. In this paper, we present improvement of a virtual lateral PIN photodiode with a SiGe/Si MQW structure as compared to a photodiode developed on bulk silicon. Hence, 5 periods of stacked SiGe MQW were grown on Si(100) substrate with a buried oxide (BOX) layer. A lateral PIN photodiode consisting of the SiGe/Si MQW layers as the active absorption layer with intensity response in the 800-1600 nm wavelength range was demonstrated. The results obtained for total quantum efficiency (TQE) and response speed were 26% and 16.7 ps (20.8 GHz) respectively for design parameters of intrinsic region length of 6 ?m, photo-absorption layer thickness of 0.305 ?m, incident optical power of 1 mW/cm2 and bias voltage of 2 V. In summary, the incorporation of SiGe MQWs into the standard lateral PIN photodiode has increased both the detection wavelength range up to the infrared region and the frequency response of the device. Copyright © 2014 American Scientific Publishers Final 2023-05-16T02:46:39Z 2023-05-16T02:46:39Z 2014 Article 10.1166/jno.2014.1618 2-s2.0-84920126230 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84920126230&doi=10.1166%2fjno.2014.1618&partnerID=40&md5=b5da8f20b59e4a70271975d19d7db0ef https://irepository.uniten.edu.my/handle/123456789/22013 9 4 507 510 American Scientific Publishers Scopus |
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Silicon-on-insulator (SOI)-based silicon germanium (SiGe) multi quantum-well (MQW) infrared PIN photodiode has a broad range of application including infrared sensors as well as in optical fiber communications. In this paper, we present improvement of a virtual lateral PIN photodiode with a SiGe/Si MQW structure as compared to a photodiode developed on bulk silicon. Hence, 5 periods of stacked SiGe MQW were grown on Si(100) substrate with a buried oxide (BOX) layer. A lateral PIN photodiode consisting of the SiGe/Si MQW layers as the active absorption layer with intensity response in the 800-1600 nm wavelength range was demonstrated. The results obtained for total quantum efficiency (TQE) and response speed were 26% and 16.7 ps (20.8 GHz) respectively for design parameters of intrinsic region length of 6 ?m, photo-absorption layer thickness of 0.305 ?m, incident optical power of 1 mW/cm2 and bias voltage of 2 V. In summary, the incorporation of SiGe MQWs into the standard lateral PIN photodiode has increased both the detection wavelength range up to the infrared region and the frequency response of the device. Copyright © 2014 American Scientific Publishers |
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57201289731 |
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57201289731 Menon P.S. Tasirin S.K. Ahmad I. Abdullah S.F. |
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Article |
| author |
Menon P.S. Tasirin S.K. Ahmad I. Abdullah S.F. |
| spellingShingle |
Menon P.S. Tasirin S.K. Ahmad I. Abdullah S.F. Wide wavelength range and high speed SiGe/Si multi quantum-well silicon-on-insulator-based lateral PIN photodiode |
| author_sort |
Menon P.S. |
| title |
Wide wavelength range and high speed SiGe/Si multi quantum-well silicon-on-insulator-based lateral PIN photodiode |
| title_short |
Wide wavelength range and high speed SiGe/Si multi quantum-well silicon-on-insulator-based lateral PIN photodiode |
| title_full |
Wide wavelength range and high speed SiGe/Si multi quantum-well silicon-on-insulator-based lateral PIN photodiode |
| title_fullStr |
Wide wavelength range and high speed SiGe/Si multi quantum-well silicon-on-insulator-based lateral PIN photodiode |
| title_full_unstemmed |
Wide wavelength range and high speed SiGe/Si multi quantum-well silicon-on-insulator-based lateral PIN photodiode |
| title_sort |
wide wavelength range and high speed sige/si multi quantum-well silicon-on-insulator-based lateral pin photodiode |
| publisher |
American Scientific Publishers |
| publishDate |
2023 |
| _version_ |
1806425825138966528 |
| score |
13.222552 |