Cover Image

Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device

This paper presents a systematic study of various high-K materials on metal gate MOSFET for 18nm NMOS. From the study, we find a suitable combination materials between the high-K and metal gate, which has beneficial effects on the electrical characteristics of 18nm NMOS. The device shows a good impr...

Full description

Saved in:
Bibliographic Details
Main Authors: Atan N.B., Ahmad I.B., Majlis B.B.Y.
Other Authors: 26422792900
Format: Conference Paper
Published: Institute of Electrical and Electronics Engineers Inc. 2023
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.uniten.dspace-21848
record_format dspace
spelling my.uniten.dspace-218482023-05-16T10:45:42Z Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device Atan N.B. Ahmad I.B. Majlis B.B.Y. 26422792900 12792216600 6603071546 This paper presents a systematic study of various high-K materials on metal gate MOSFET for 18nm NMOS. From the study, we find a suitable combination materials between the high-K and metal gate, which has beneficial effects on the electrical characteristics of 18nm NMOS. The device shows a good improvement on its result of sub-threshold leakage current, IOFF, and drive current, ION for different dielectric constants (k). The virtual design and fabrication of the device were performed by using Athena module. While electrical characteristic performance was simulated by using Atlas module of SILVACO software. Physical models of the 18nm NMOS were used for simulation from Al2O3, HfO2, and TiO2 as the material gate dielectric, with TiSi2 as the metal gate, which provide higher physical thickness that able to reduce the sub-threshold leakage current IOFF. Thus, excellent dielectric properties such as high-K constant, low IOFF, higher ION, threshold voltage VTH, and electrical characteristics were demonstrated. From the simulation results of ION and IOFF, it was proven that HfO2 is the best dielectric material with combination of metal gate, TiSi2. © 2014 IEEE. Final 2023-05-16T02:45:42Z 2023-05-16T02:45:42Z 2014 Conference Paper 10.1109/SMELEC.2014.6920794 2-s2.0-84908260453 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84908260453&doi=10.1109%2fSMELEC.2014.6920794&partnerID=40&md5=8b5778d80cc442c4f6347fc853c74ef3 https://irepository.uniten.edu.my/handle/123456789/21848 6920794 56 59 Institute of Electrical and Electronics Engineers Inc. Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
description This paper presents a systematic study of various high-K materials on metal gate MOSFET for 18nm NMOS. From the study, we find a suitable combination materials between the high-K and metal gate, which has beneficial effects on the electrical characteristics of 18nm NMOS. The device shows a good improvement on its result of sub-threshold leakage current, IOFF, and drive current, ION for different dielectric constants (k). The virtual design and fabrication of the device were performed by using Athena module. While electrical characteristic performance was simulated by using Atlas module of SILVACO software. Physical models of the 18nm NMOS were used for simulation from Al2O3, HfO2, and TiO2 as the material gate dielectric, with TiSi2 as the metal gate, which provide higher physical thickness that able to reduce the sub-threshold leakage current IOFF. Thus, excellent dielectric properties such as high-K constant, low IOFF, higher ION, threshold voltage VTH, and electrical characteristics were demonstrated. From the simulation results of ION and IOFF, it was proven that HfO2 is the best dielectric material with combination of metal gate, TiSi2. © 2014 IEEE.
author2 26422792900
author_facet 26422792900
Atan N.B.
Ahmad I.B.
Majlis B.B.Y.
format Conference Paper
author Atan N.B.
Ahmad I.B.
Majlis B.B.Y.
spellingShingle Atan N.B.
Ahmad I.B.
Majlis B.B.Y.
Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device
author_sort Atan N.B.
title Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device
title_short Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device
title_full Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device
title_fullStr Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device
title_full_unstemmed Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device
title_sort effects of high-k dielectrics with metal gate for electrical characteristics of 18nm nmos device
publisher Institute of Electrical and Electronics Engineers Inc.
publishDate 2023
_version_ 1806424170941120512
score 13.222552

Similar Items