Interband and Intersubband Optical Transition Matrix Elements of Ge/Gesisn Quantum Well
The interband and intersubband optical transition matrix elements of a tensile-strained Ge/GeSiSn quantum well are investigated by using an 8-band k·p method. For conduction to valence band interband optical transition, the S→X,Y,Z transitions are dominant. For intersubband optical transition includ...
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| フォーマット: | E-Article |
| 出版事項: |
ENCON 2013
2013
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| オンライン･アクセス: | http://ir.unimas.my/id/eprint/8162/ http://rpsonline.com.sg/proceedings/9789810760595/html/015.xml |
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